Modeling method for predicting switching loss in dynamic process of IGBT
A technology of switching loss and modeling method, which is applied in the direction of calculation model, biological model, biological neural network model, etc., can solve the problems of slow prediction speed, low prediction accuracy, and slow simulation speed, so as to improve reliability and expand Strong ability and high reliability to predict the effect
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[0076] The present invention uses a PC as a platform for model building, wherein the CPU is i5-3230M 2.60GHz, the installed memory is 4GB, the operating system is Windows 7-64 bits, and MATLAB R2016a version is used. The IGBT module is MMG75S120B6HN from Macmic. The rated value of the module is 1200V / 75A. The module includes two identical IGBT chips and freewheeling diodes, and the distance between the IGBT chip and the FWD chip is 6.4 mm.
[0077] Step 1: Obtain IGBT dynamic characteristic test data
[0078] (1.1) Obtain 240 sets of test data through the IGBT dynamic characteristic test, each set of data includes DC bus voltage, collector current, gate voltage and switching frequency data, as well as the turn-on and turn-off loss data of the IGBT module;
[0079] Step 2: Normalize and distribute the IGBT dynamic characteristic test data
[0080] (2.1) Use formula (1) to normalize the IGBT characteristic test data;
[0081] (2.2) Divide the normalized test data into learning...
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