A High Quality Factor Thin Film Bulk Acoustic Resonator

A technology of thin-film bulk acoustic wave and high quality factor, applied in the direction of impedance network, electrical components, etc., can solve the problems of resonator quality factor damage, acoustic energy leakage, etc., achieve high Q value, improve structural strength, and improve the effect of quality factor

Active Publication Date: 2022-07-29
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, part of the acoustic energy in this technical solution will still leak to the external area through the air bridge structure, which will still greatly damage the quality factor of the resonator

Method used

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  • A High Quality Factor Thin Film Bulk Acoustic Resonator
  • A High Quality Factor Thin Film Bulk Acoustic Resonator
  • A High Quality Factor Thin Film Bulk Acoustic Resonator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Example 1. combine Figure 2A and Figure 2B , the basic structure of a high quality factor thin film bulk acoustic wave resonator proposed by the present invention includes a substrate 1 with a groove 2 on the upper surface, a bottom electrode layer 3 located above the substrate 1, a piezoelectric layer 4, a belt There is a top electrode layer 5 with an air bridge structure 6, wherein the air bridge structure 6 is provided with an acoustic rebound structure 7 that can rebound the transverse acoustic wave and improve the quality factor of the thin-film bulk acoustic wave resonator; the air bridge The boundary of one direction of the structure 6 is located inside the groove 2, and the boundary of the other direction extends beyond the boundary of the groove 2; the upper and lower ends of the acoustic rebound structure 7 are respectively connected with the piezoelectric layer 4 and the air bridge structure. 6 close to each other to form an acoustic impedance mismatch in...

Embodiment 2

[0042] Example 2. Taking a specific 2.6GHz thin-film bulk acoustic resonator as an example, the above structures are verified and analyzed through the simulation design results to analyze the actual effect of the present invention on improving the Q value of the thin-film bulk acoustic resonator.

[0043] image 3 It is a schematic diagram of the performance test parameters of the thin film bulk acoustic wave resonator without the air bridge structure. Figure 4 It is a schematic diagram of the performance test parameters of the thin film bulk acoustic wave resonator with the air bridge structure. Figure 5 It is a schematic diagram of the performance test parameters of the basic structure of a film bulk acoustic wave resonator with high quality factor proposed by the present invention. exist image 3 In the simulation design result of the thin film bulk acoustic wave resonator without the air bridge structure shown, the Q value of the thin film bulk acoustic wave resonator...

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PUM

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Abstract

The invention relates to a high quality factor thin film bulk acoustic resonator, comprising a substrate 1 with a groove 2 on the upper surface, a bottom electrode layer 3 located above the substrate 1, a piezoelectric layer 4, and an air bridge structure 6 The top electrode layer 5 is characterized in that the air bridge structure 6 is provided with an acoustic rebound structure 7 that can rebound the transverse acoustic wave and improve the quality factor of the thin-film bulk acoustic wave resonator; the material of the acoustic rebound structure 7 is Thin film medium; the acoustic rebound structure 7 is a polyhedron facing the bridge cavity of the air bridge structure 6 and is vertically arranged in the suspended area of ​​the bridge cavity between the piezoelectric layer 4 and the air bridge structure 6, and the upper end of the acoustic rebound structure 7 is connected to the air The support structure on the top side of the bridge structure 6 is in close contact, and the lower end of the acoustic rebound structure 7 is in close contact with the top of the piezoelectric layer 4; An air gap 8 is left between adjacent inner sides of the cavity support structure. The invention can significantly improve the quality factor of the thin-film bulk acoustic wave resonator.

Description

technical field [0001] The invention relates to a thin-film bulk acoustic wave device, in particular to a thin-film bulk acoustic wave resonator with high quality factor. Background technique [0002] With the development of wireless communication technology and smart phones, the RF front-end has higher and higher requirements for component performance indicators and integration. RF front-end filters, duplexers, and multiplexers based on thin-film bulk acoustic wave devices have been widely used in smartphones, communication terminals, and In the communication base station, it will be used in the communication equipment of the Internet of Things terminals such as the Internet of Vehicles and industrial control in the future. In addition, oscillators based on thin-film bulk acoustic wave devices have great application value in high-speed serial data devices such as SATA hard disk drives, USB3.0 standard PC peripherals, C-type interfaces, and optical transceivers. [0003] A...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/02H03H9/17
CPCH03H9/02086H03H9/171
Inventor 赵洪元夏燕
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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