Preparation method of silicon oxide fiber, and silicon oxide fiber
A technology of silicon oxide fiber and silicon oxide layer, which is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that the size and density of silicon oxide fibers are difficult to precisely control, the size of nanofibers is not uniform, and it is difficult to prepare Nanofibers and other issues, to achieve the effects of controllable density, good uniformity and controllable scale
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[0027] Such as figure 1 Shown, in some embodiments, a kind of preparation method of silica fiber is provided, comprising the following steps:
[0028] S100, growing and forming a silicon oxide layer on the surface of the silicon wafer;
[0029] S200, forming a patterned mask layer on the surface of the silicon oxide layer;
[0030] S300. Perform a plasma etching process on the silicon wafer formed with the silicon oxide layer and the patterned mask layer to obtain the silicon oxide fiber.
[0031] The preparation method of the silicon oxide fiber provided in the embodiment of the present application can be prepared by growing silicon oxide on a silicon wafer to form a silicon oxide layer, then photolithography to form a patterned mask layer, and then performing a plasma etching process to obtain an oxide fiber. Silicon fiber, in the process of plasma etching, the process parameters are adjusted according to the size of the required silicon oxide fiber, which is easy to opera...
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