Cellular structure of silicon carbide MOSFET device, and power semiconductor device

Abstract

The invention discloses a cellular structure of a silicon carbide MOSFET device. The cellular structure comprises a drift region positioned on a substrate layer, a second conductive type well region and a first JFET region which are positioned in the drift region, an enhancement region positioned in the surface of the well region, a gate insulation layer located on the first conductivity type enhancement region, the well region and the first JFET region and making contact with the first conductivity type enhancement region, the well region and the first JFET region at the same time, a gate on the gate insulation layer, a source metal located on the enhancement region, Schottky metals located on the second conductivity type enhancement region and the drift region, a second JFET region located on the surface of the drift region between the Schottky metals, and a drain metal. An SBD is integrated in the silicon carbide MOSFET cellular structure, so opening of a body diode is restrained, and the reliability of the device is improved; the SBD is integrated between the second conduction type enhancement regions of the MOSFET cellular structure, so the overall power density of the chip is increased; and Schottky metal and the second JFET region are arranged at intervals, so a good compromise relationship between the on resistance and the leakage current is realized.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a cell structure of a silicon carbide metal oxide semiconductor field effect transistor (MOSFET) device integrated with a Schottky diode (SBD) and a power semiconductor device. Background technique [0002] With the development of energy saving and emission reduction, new energy grid connection, and smart grid, the third-generation semiconductor silicon carbide (SiC) power devices have been paid more and more attention. Its main advantage is that its breakdown electric field strength is 10 times that of traditional silicon devices, or the same Under the voltage / current level, the specific on-resistance is nearly one-thousandth of that of silicon devices. The switching frequency of SiC devices is 20 times that of silicon devices, which can reduce the volume of energy storage components in the circuit. In theory, SiC devices can work in a high temperature environment abo...

AI Technical Summary

Problems solved by technology

Under normal circumstances, anti-parallel SBD at the chip level will increase the cost of module packaging and will introduce additional bonding wires and stray inductance at the SBD end, resulting in a decline in the electrical performance of the module

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