Large-size silicon wafer double-sided polishing method

Abstract

The invention provides a large-size silicon wafer double-sided polishing method. The method comprises the following steps of: controlling the pressure of a pressure plate arranged above a silicon wafer, and selecting a rough polishing solution with a corresponding particle size to roughly polish the double sides of the silicon wafer; and adjusting the pressure of the pressure plate, and selecting a fine polishing solution with a corresponding particle size to carry out fine polishing on the double sides of the silicon wafer, wherein the rough polishing solution or the fine polishing solution flows to an upper polishing pad and a lower polishing pad which are arranged on the two sides of the silicon wafer through the same main pipeline and the pressure plate; the fine polishing solution at least comprises a polyhydric alcohol compound; and the rough polishing solution and the fine polishing solution both comprise a mixed solution of SiO2 and NH4OH. After rough polishing and fine polishing are sequentially conducted on the silicon wafer, water film treatment is conducted on the double sides of the silicon wafer, an adhesive on the surface of the silicon wafer can be completely removed, and the cleaning effect is good; and the flatness within 0.5 [mu]m can also be obtained.

Description

technical field [0001] The invention belongs to the technical field of semiconductor silicon wafer polishing, and in particular relates to a large-size silicon wafer double-sided polishing method. Background technique [0002] Existing semiconductor polishing methods are mainly single-side polishing, which is only suitable for small-sized silicon wafers with a size of 4-8 inches. With the development of large-scale solar silicon wafers, for 12-inch and more than 12-inch silicon wafers, the larger the single-sided size of the silicon wafer, the more difficult it is to control the geometric parameters of its polishing; at the same time, if single-sided polishing is used In this way, not only the polishing efficiency is low, but also the polishing quality is difficult to guarantee. The flatness of the geometric parameters after polishing has a large variation range and poor consistency, which does not meet the standard requirements and seriously affects the processing of semico...

AI Technical Summary

Problems solved by technology

[0003] The invention provides a double-sided polishing method for large-size silicon wafers, which solves the technical problems of large-size silicon wafer flatness, poor consistency, poor polishing effect, and low polishing efficiency in the prior art.

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