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A blue light perovskite light-emitting diode and preparation method thereof

A light-emitting diode and perovskite technology, which is applied in semiconductor/solid-state device manufacturing, organic semiconductor device materials, electric solid-state devices, etc., can solve the problem of low photoluminescence quantum yield and red-shifted emission wavelength of perovskite light-emitting films , complex preparation process and other issues, to achieve the effect of reducing crystal surface defects, high external quantum efficiency, and simple processing methods

Active Publication Date: 2022-07-26
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the mainstream display technologies include liquid crystal display technology and organic electroluminescent technology, both of which have obvious defects: LCD (liquid crystal display) has problems such as complex preparation process, small viewing angle, serious light leakage, and low temperature resistance. ; OLED (organic electro-laser display, organic light-emitting semiconductor) has problems such as high cost, difficult processing, and low yield rate
However, most of the small molecules of organic ammonium salts that have a good splitting ability for perovskite crystals will lead to problems such as low photoluminescence quantum yield and red shift of luminescence wavelength in perovskite luminescent films, which are difficult for practical application.

Method used

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  • A blue light perovskite light-emitting diode and preparation method thereof
  • A blue light perovskite light-emitting diode and preparation method thereof
  • A blue light perovskite light-emitting diode and preparation method thereof

Examples

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Embodiment 1

[0044] A blue light perovskite light-emitting diode, the preparation method of which comprises the following steps:

[0045] 1) ultrasonically clean the glass substrate coated with the ITO layer with isopropyl alcohol, deionized water containing detergent, pure deionized water and isopropyl alcohol in turn, then place the substrate in an oven for drying, and then use ultraviolet and Ozone treatment for 5min, and then spin-coating 50% PEDOT:PSS aqueous solution on the ITO layer of the glass substrate at a spin coating speed of 4000rpm, and then annealed at 120°C for 20min to form a hole transport layer with a thickness of 20nm;

[0046] 2) 42.6 mg of CsBr, 73.4 mg of PbBr 2 , 18.5 mg of isobutylamine hydrobromide and 25.6 mg of 1-phenyl biguanide hydrochloride were dispersed in 1 mL of DMSO to make a perovskite precursor solution, and then the perovskite precursor solution was spin-coated in the air. On the hole transport layer, spin coating at a speed of 500rpm for 5s, spin a...

Embodiment 2

[0049]A blue light perovskite light-emitting diode, the preparation method of which comprises the following steps:

[0050] 1) ultrasonically clean the glass substrate coated with the ITO layer with isopropyl alcohol, deionized water containing detergent, pure deionized water and isopropyl alcohol in turn, then place the substrate in an oven for drying, and then use ultraviolet and After ozone treatment for 5min, spin-coating 50% PEDOT:PSS aqueous solution on the ITO layer of the glass substrate at a spin coating speed of 4000rpm, and then annealing at 120°C for 20min to form a hole transport layer with a thickness of 20nm;

[0051] 2) 42.6 mg of CsBr, 73.4 mg of PbBr 2 , 24.6 mg of isobutylamine hydrobromide and 25.6 mg of 1-phenyl biguanide hydrochloride were dispersed in 1 mL of DMSO to make a perovskite precursor solution, and then the perovskite precursor solution was spin-coated in the air. On the hole transport layer, spin coating at a speed of 500rpm for 5s, spin at a...

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Abstract

The invention discloses a blue light perovskite light emitting diode and a preparation method thereof. The blue light perovskite light emitting diode of the present invention comprises a blue light perovskite light emitting layer, and the composition of the blue light perovskite light emitting layer includes CsBr, PbBr 2 , isobutylamine hydrobromide and 1-phenyl biguanide hydrochloride. The preparation method of the blue light perovskite light-emitting diode of the present invention includes the following steps: 1) coating the PEDOT:PSS solution on the anode layer to form a hole transport layer; 2) adding CsBr, PbBr 2 , the solution of isobutylamine hydrobromide and 1-phenyl biguanide hydrochloride is coated on the hole transport layer to form a blue light perovskite light-emitting layer; 3) the electron transport layer and the cathode layer are successively evaporated on the blue light On the perovskite light-emitting layer, a blue-light perovskite light-emitting diode is obtained. The blue light perovskite light emitting diode of the present invention can realize blue light emission, has high external quantum efficiency, simple preparation method and low production cost.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a blue light perovskite light-emitting diode and a preparation method thereof. Background technique [0002] An optoelectronic device is a component that can convert electrical energy into light energy, and is the core unit in lighting equipment and display equipment. At present, the mainstream display technologies include liquid crystal display technology and organic electroluminescence technology, both of which have obvious defects: LCD (liquid crystal display) has problems such as complex preparation process, small viewing angle, serious light leakage, and low temperature resistance. ; OLED (organic electric laser display, organic light-emitting semiconductor) has problems such as high cost, difficult processing, and low yield. Compared with the above two display technologies, perovskite LED light-emitting technology is far less expensive than organic electrolu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/12H10K50/12H10K71/00H10K2102/00
Inventor 王磊臧越薛启帆叶轩立
Owner SOUTH CHINA UNIV OF TECH
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