Production method of AlSb-GeSn-AlSb heterostructure solid-state plasma PiN diode and device thereof

A plasma and heterostructure technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of low gain of silicon-based reconfigurable antennas, low diode carrier concentration, and poor distribution uniformity, etc. problems, to achieve the effect of improving system integration and stealth performance, improving concentration and distribution uniformity, and increasing junction depth

Pending Publication Date: 2021-06-18
ENG UNIV OF THE CHINESE PEOPLES ARMED POLICE FORCE
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the traditional silicon-based highly integrated reconfigurable antenna has a "catenary" distribution of solid-state plasma inside the basic radiation unit PiN diode, resulting in a low gain of the silicon-based reconfigurable antenna, which cannot meet the requirements of a radiating antenna. Due to the limitations of the bulk silicon material and the fabrication process of the currently researched diodes, the carrier concentration inside the diode is low and the distribution uniformity is poor, which limits its application in the field of high-performance silicon-based antennas.

Method used

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  • Production method of AlSb-GeSn-AlSb heterostructure solid-state plasma PiN diode and device thereof
  • Production method of AlSb-GeSn-AlSb heterostructure solid-state plasma PiN diode and device thereof
  • Production method of AlSb-GeSn-AlSb heterostructure solid-state plasma PiN diode and device thereof

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Embodiment 1

[0067] See figure 1 , figure 1 It is a flowchart of a method for manufacturing a solid-state plasma PiN diode with an AlSb-GeSn-AlSb heterostructure according to an embodiment of the present invention. The method is suitable for preparing a lateral solid-state plasma PiN diode based on GeOI, and the AlSb-GeSn-AlSb heterostructure Solid-state plasmonic PiN diodes with solid structures are mainly used to make silicon-based highly integrated reconfigurable antennas. The method comprises the steps of:

[0068] (a) Selecting a GeOI substrate with a certain crystal orientation, and doping in the GeOI substrate to form a top-layer GeSn region;

[0069] (b) setting a deep trench isolation region in the GeSn region on the top layer of the substrate;

[0070] (c) etching the GeSn region to form a P-type trench and an N-type trench, and the depth of the P-type trench and the N-type trench is less than the thickness of the top-layer GeSn region;

[0071] (d) forming a P-type active re...

Embodiment 2

[0111] See Figure 2a-Figure 2t , Figure 2a-Figure 2t It is a schematic diagram of a method for preparing a solid-state plasma PiN diode with an AlSb-GeSn-AlSb heterostructure according to an embodiment of the present invention. A solid-state plasma PiN diode with an AlSb-GeSn-AlSb heterostructure between 50 microns and 150 microns) can be used as an example to describe in detail, and the specific steps are as follows:

[0112] S10, selecting a GeOI substrate.

[0113] See Figure 2a , the crystal orientation of the GeOI substrate 101 may be (100) or (110) or (111), without any limitation here. In addition, the doping type of the GeOI substrate 101 can be n-type or p-type, and the doping concentration is, for example, 0.5×10 14 ~0.5×10 15 cm -3 , the thickness of the top layer Ge is, for example, 30-120 μm.

[0114] S20, doping in the GeOI substrate to form a top-layer GeSn region.

[0115] See Figure 2b The specific method may be: photoetching the GeOI substrate, d...

Embodiment 3

[0155] Please refer to image 3 , image 3 It is a schematic diagram of the device structure of the AlSb-GeSn-AlSb heterostructure solid-state plasmonic PiN diode according to the embodiment of the present invention. The AlSb-GeSn-AlSb heterostructure PiN diode adopts the above-mentioned figure 1 The preparation method shown is made, specifically, the solid-state plasma PiN diode of the AlSb-GeSn-AlSb heterostructure is prepared and formed on the GeOI substrate 301, and the P region 303, the N region 304 of the diode and the lateral direction are located on the P The intrinsic region between region 303 and the N region 304 is located in the top GeSn layer 302 of the substrate. Wherein, the PiN diode adopts deep trench isolation technology, that is, a deep trench isolation region 307 is provided outside the P region 303 and the N region 304, and the depth of the isolation trench 307 is greater than or equal to the thickness of the top GeSn layer 302. In addition, the P regio...

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Abstract

The invention relates to the technical field of semiconductor materials and device manufacturing, and discloses a production method of an AlSb-GeSn-AlSb heterostructure solid-state plasma PiN diode and a device thereof. The production method comprises the following steps: selecting a GeOI substrate of a certain crystal orientation, and carrying out the doping in the GeOI substrate to form a top layer GeSn region; arranging a deep groove isolation region in the GeSn region on the top layer of the substrate; etching the GeSn region to form a P type groove and an N type groove; forming a P-type active region and an N-type active region in the P-type groove and the N-type groove by adopting ion implantation; and forming a GeSn alloy lead on the substrate. According to the production method and the device thereof, the distribution characteristics of solid-state plasma at the bottom and in the middle of an intrinsic region are improved so that the carrier concentration and the distribution uniformity are greatly improved, and the gain of the silicon-based reconfigurable antenna is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and device manufacturing, in particular to a preparation method of AlSb-GeSn-AlSb heterostructure solid-state plasma PiN diodes and devices thereof. Background technique [0002] The solid-state plasma antenna uses an external bias voltage as the plasma excitation source, and generates high-concentration plasma by controlling a specific area on the semiconductor substrate to radiate or receive electromagnetic waves. As the basic radiation unit of the antenna, the diode is in the forward bias, the carrier holes and electrons in the P region and the N region diffuse to the intrinsic region under the action of the electric field, and a high concentration is formed in the intrinsic region in the steady state. At this time, the resistivity of the diode becomes very small, and it has metal-like characteristics, which can replace the metal to realize the coupling of electromagnetic waves....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/868H01L29/06H01L21/329
CPCH01L29/868H01L29/0603H01L29/0684H01L29/6609
Inventor 苏汉刘颖
Owner ENG UNIV OF THE CHINESE PEOPLES ARMED POLICE FORCE
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