Broadband high-efficiency microwave power amplifier

Abstract

The invention discloses a broadband high-efficiency microwave power amplifier which comprises an input single-end-to-balance matching network, a first broadband high-gain amplification network, a second broadband high-gain amplification network and an output balance-to-single-end matching network. According to the core architecture, the first broadband high-gain amplification network and the second broadband high-gain amplification network have the characteristics of high power and high gain. Meanwhile, the good low insertion loss and broadband standing wave matching characteristics of the input single-end-to-balance matching network and the output balance-to-single-end matching network in a microwave frequency band are utilized; therefore, the whole power amplifier has good high gain, high efficiency, good standing wave characteristic and high power output capability.

Description

technical field [0001] The invention relates to field effect transistor radio frequency power amplifiers and the field of integrated circuits, in particular to a wideband high-efficiency microwave power amplifier applied to a transmitting module of a radio frequency microwave terminal transceiver. Background technique [0002] With the rapid development of wireless communication systems and RF microwave circuits, RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs the radio frequency and microwave power amplifier of the transmitter to have high output power, high gain, high efficiency, low cost and other performances. However, when integrated circuit technology is used to design and implement radio frequency and microwave power amplifier chip circuits, its performance and cost are subject to certain constraints, mainly reflected in the limited ability of high pow...

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Problems solved by technology

However, when integrated circuit technology is used to design and implement radio frequency and microwave power amplifier chip circuits, its performance and cost are subject to certain constraints, mainly reflected in the limited ability of high power and high efficiency. Typical power amplifiers adopt a multi-channel parallel structure, or It is a distributed structure. The combined efficiency of these two structures is limited, resulting in a part of the power loss in the combined network, which limits the high power and high efficiency capabilities.

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