Double-station processor capable of achieving uniform exhaust and exhaust method of double-station processor

Abstract

The invention discloses a double-station processor capable of achieving uniform exhaust and an exhaust method thereof. The double-station processor comprises two adjacently-arranged plasma processing cavities and a shared exhaust pump, each plasma cavity is internally provided with a base, the periphery, surrounding the base, in each plasma processing cavity is provided with a limiting ring, and the limiting rings are arranged in the plasma processing cavities; an exhaust area is arranged below the limiting ring, a plurality of gas channels are formed in the limiting ring and used for exhausting gas to the exhaust area, the exhaust pump is in fluid communication with the exhaust area of each plasma processing cavity, the rotating ring is arranged below the limiting ring, and the rotating ring is provided with a plurality of blocking areas. The blocking areas correspond to part of the gas channels of the limiting ring, and the corresponding positions of the blocking areas and the gas channels are adjusted along with rotation of the rotating ring. Through partial blocking of the rotating ring, airflow distribution of an exhaust area is changed, and meanwhile symmetry of a gas flow field is achieved through asymmetric rotating speeds.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to a dual-station processor and an exhaust method for realizing uniform exhaust. Background technique [0002] In the equipment that uses reactive gas to process semiconductor substrates, such as plasma etching equipment, the reactive gas dissociates into plasma in the reaction chamber to process the semiconductor substrate. As the size of the semiconductor substrate gradually increases, The precision requirements of the processing technology are constantly improving, and the uniformity of semiconductor substrate processing has become a key parameter to measure whether a semiconductor equipment is qualified or not. [0003] Semiconductor equipment has a complex internal environment. In order to improve the efficiency of substrate processing, at least two reaction chambers can be set on one processing equipment, and each reaction chamber includes at least one reaction chamber 7...

AI Technical Summary

Problems solved by technology

Therefore, the exhaust device can only be arranged under the adjacent side walls of the two reaction chambers, and the communication between the reaction chamber and the exhaust device 40 is realized through an opening 45, which will inevitably lead to the separation between the plasma confinement device 10 at different positions and the exhaust device 40. Different path lengths lead to different pressures under different plasma confinement devices 10, which in turn affects the uniformity of gas distribution on the surface of the semiconductor substrate and reduces the pass rate of the semiconductor substrate

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