Preparation method of tungsten-doped indium oxide target material

A technology of indium oxide and indium hydroxide, which is applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problem that powder is difficult to mix evenly.

Active Publication Date: 2021-05-28
GUANGXI CRYSTAL UNION PHOTOELECTRIC MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chinese patent CN 105374901A discloses a preparation method of IWO material used for transparent electrodes of thin-film solar cells, which records the technical scheme of preparing IWO target material by mixing indium oxide powder and tungsten oxide powder, but the preparation process is based on In 2 o 3 Powder and WO 3 The powder is used as the main raw material, mixed with deionized water, because In 2 o 3 Powder and WO 3 The powder is insoluble in water, the mixing process is equivalent to the physical mixing between powder and powder, there is a problem that the powder is difficult to mix evenly

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  • Preparation method of tungsten-doped indium oxide target material

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Comparison scheme
Effect test

Embodiment 1

[0023] Take 30 L of 85% analytically pure formic acid solution, put 10 kg of indium wire with a purity of more than 99.99% into the above solution, and carry out the reaction. After the reaction was completed, 26 g of ammonium metatungstate was added and stirred until it was completely dissolved. The solution is spray-dried to obtain an IWO precursor powder with a moisture content of less than 5%. The obtained powder was calcined at 600° C. for 20 hours in an air atmosphere. After the calcination was completed, a well-mixed IWO powder was obtained. The IWO powder is subjected to conventional ball milling and granulation, and after being pressed into shape, sintered in an oxygen atmosphere at 1550° C. for 1 hour, and after the sintering is completed, an IWO target material is obtained.

Embodiment 2

[0025] Take 15kg of analytically pure acetic acid and 45L of deionized water, and mix them to prepare an acetic acid solution. 5 kg of indium wire with a purity of 99.99% or more was put into the above solution to carry out the reaction. After the reaction was completed, 340 g of ammonium metatungstate was added and stirred until it was completely dissolved. The solution is spray-dried to obtain an IWO precursor powder with a moisture content of less than 5%. The obtained powder was calcined at 700° C. for 15 hours in an air atmosphere. After the calcination was completed, a well-mixed IWO powder was obtained. The IWO powder is subjected to conventional ball milling and granulation, and after being pressed into shape, sintered at 1500° C. for 10 hours in an oxygen atmosphere, and after the sintering is completed, an IWO target material is obtained.

Embodiment 3

[0027] Take 10 L of analytically pure peracetic acid and 30 L of deionized water, mix them into a 40 L solution, and put 2 kg of indium wire with a purity of more than 99.99% into the above solution to carry out the reaction. After the reaction was completed, 9 L of analytically pure ethanol was added to the solution, and the solution was stirred evenly, and a white precipitate appeared in the solution. 84 g of ammonium paratungstate was added and dissolved by stirring. Stir to make it into a uniform suspension, and spray-dry to obtain IWO precursor powder with a moisture content of 5% or less. The obtained powder was calcined at 1000° C. for 0.5 hour in an oxygen atmosphere, and after the calcination was completed, a uniformly mixed IWO powder was obtained. After conventional grouting molding of the IWO powder, it is sintered at 1400° C. for 25 hours in an oxygen atmosphere. After the sintering is completed, the IWO target is obtained.

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Abstract

The invention relates to a preparation method of a tungsten-doped indium oxide target material. The preparation method comprises the following steps of (1) preparing an indium-containing raw material, specifically, dissolving metal indium in organic acid to obtain an organic acid indium solution for later use, or further adding alcohol into the organic acid indium solution to generate indium hydroxide precipitate for later use; (2) mixing a tungsten-containing raw material, specifically, dissolving ammonium paratungstate or ammonium metatungstate in the organic acid indium solution or a mixture of indium hydroxide and water; (3) carrying out spray drying to obtain powder in which elements indium and tungsten are uniformly mixed, wherein the powder is an IWO precursor; (4) calcining the obtained IWO powder precursor to obtain IWO powder; and (5) carrying out forming and sintering to obtain the IWO target material. According to the method, at least one of the indium-containing raw material and the tungsten-containing raw material exists in the form of a solution, and the indium-containing raw material and the tungsten-containing raw material are mixed, and due to liquid-liquid mixing or liquid-solid mixing, the mixing is more uniform than powder mixing, so that tungsten are doped in the prepared IWO target material more uniformly.

Description

technical field [0001] The invention relates to a preparation method of a metal oxide target, in particular to a preparation method of an indium oxide-doped tungsten target. Background technique [0002] Amorphous silicon / crystalline silicon heterojunction cells are currently one of the most efficient solar cells among ground-based high-efficiency solar cells, and have received extensive attention and research in the industry in recent years. One of the most critical parts of the amorphous silicon / crystalline silicon heterojunction cell structure is the transparent conductive layer. The commonly used indium tin oxide (ITO) transparent conductive film, when applied to this solar cell, has the problem of free carrier absorption in the near-infrared band, which greatly limits the spectral response of the solar cell in the long-wavelength region. Compared with ITO films, tungsten-doped indium oxide (IWO) films have higher carrier mobility, better high-temperature stability, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08
CPCC23C14/3414C23C14/08
Inventor 陆映东薛超张倍维王凯宋春华梁盈祥
Owner GUANGXI CRYSTAL UNION PHOTOELECTRIC MATERIALS CO LTD
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