Batch sintering method of high-performance silicon nitride ceramic substrate

Abstract

The invention relates to a batch sintering method of a high-performance silicon nitride ceramic substrate. The method comprises the following steps: (1) stacking silicon nitride ceramic substrate biscuits in a boron nitride crucible, and laying a layer of boron nitride powder between adjacent silicon nitride ceramic substrate biscuits; (2) performing vacuum pumping step by step, and then performing debonding at 500-900 DEG C in a nitrogen atmosphere or a reducing atmosphere; and (3) carrying out air pressure sintering at the temperature of 1800-2000 DEG C in a nitrogen atmosphere to realize batch preparation of the high-performance silicon nitride ceramic substrate.

Description

technical field [0001] The invention relates to a batch sintering method for high-performance silicon nitride ceramic substrates, belonging to the field of ceramic material preparation. Background technique [0002] In recent years, semiconductor devices have developed rapidly along the direction of high power, high frequency, and integration. The heat generated by the operation of semiconductor devices is the key factor causing the failure of semiconductor devices, and the thermal conductivity of the insulating substrate is the key to affecting the overall heat dissipation of semiconductor devices. In addition, such as in the fields of electric vehicles and high-speed rail, semiconductor devices often face complex mechanical environments such as bumps and vibrations during use, which imposes strict requirements on the mechanical reliability of the materials used. [0003] High performance silicon nitride (Si 3 N 4 ) Ceramics have excellent mechanical and thermal properti...

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Problems solved by technology

[0009] For mass production of high-performance (high thermal conductivity, high strength, high breakdown field strength) silicon nitride ceramic substrate materials, gas pressure sintering is also considered to be the most promising and potential process method, but there are still the following main Disadvantages: (1) There is a carbon-rich atmosphere in the sintering furnace constructed of a graphite heating element and a graphite heat shield, which will pollute the substrate material to varying degrees, resulting in a decrease in the insulation performance of the silicon nitride ceramic substrate and a breakdown field (2) Production-type sintering furnaces generally have a large furnace space, and under high temperature conditions of 1800-2000 °C, they mainly rely on radiation heat transfer. The heating elements of the sintering furnace are generally arranged around the furnace. In this way, the furnace There must be a certain degree of deviation between the actual temperatures of different positions inside, which will affect the consistency of material properties; especially in order to increase the product throughput, it is necessary to set up multi-layer grilles inside the furnace, but this will inevitably further aggravate the temperature of different positions inside the furnace. temperature inhomogeneity between

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