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LNOI spot size converter based on sub-wavelength grating, and preparation method

A technology of sub-wavelength grating and mode-spot converter, which is applied in the direction of optical waveguide light guide, optical waveguide coupling, instrument, etc., can solve problems such as difficult LNOI optical chip production, limited optical mode field amplification ability, and weakened limitation ability, etc., to achieve Promote practical application, reduce effective refractive index, and reduce the effect of refractive index difference

Active Publication Date: 2021-05-11
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Mode-spot converters mainly include grating couplers and end-face couplers. The existing end-face couplers mostly use tapered waveguide structures. As the width of the waveguide becomes narrower, the ability of the waveguide to limit the optical mode is also weakened. The core layer of the waveguide The mode field will diffuse into the cladding layer. If a cladding layer with a refractive index similar to that of the waveguide core layer is used, the optical mode field can be further amplified. However, the tapered waveguide is generally relatively long, and the ability to amplify the optical mode field is limited.
The end-face coupler using cantilever beam and three-dimensional tapered waveguide improves the coupling efficiency, but its manufacturing process is difficult and the stability is poor, so it is difficult to realize large-scale LNOI optical chip production

Method used

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  • LNOI spot size converter based on sub-wavelength grating, and preparation method
  • LNOI spot size converter based on sub-wavelength grating, and preparation method
  • LNOI spot size converter based on sub-wavelength grating, and preparation method

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preparation example Construction

[0054]Such asFigure 6The process steps of the preparation method of the LnOI mold converter of the present invention include the following steps:

[0055]Step S1, the top tapered waveguide 1 etching mask was prepared. Waveguide etch masks include photoresist and metal masks, photoresist including HSQ negative glue, ZEP 520a positive colloid and 7908 positive glue, metal mask material is Ni or Ti / Ni, or Cr / Ni.

[0056]Step S2, the top tapered waveguide 1 etch. Waveguide etching uses dry etching processes, using reaction ion etching or inductively coupled plasma etching, etching gas is Ar, or sf6 / Ar mixed gas.

[0057]Step S3, the underlying cone waveguide 2 and the tapered sub-wavelength grating 3 etching mask was prepared.

[0058]Step S4, the underlying cone waveguide 2 and the conical sub-wavelength grating 3 etch.

[0059]Step S5, SIO2Medium growth: Growing SIO with PECVD2SiO2The thickness is 1 μm to 2 μm.

[0060]Step S6, SiN media growth: The SiN is grown by PECVD, and the thickness of SiN ...

Embodiment 1

[0067]The 3-inch x-cut lnoi wafer is selected, the lithium niobate film has a thickness of 600 nm, SiO2The insulating layer has a thickness of 2 μm, the substrate is Si material, and the preparation process step is:

[0068]A1) Top-tapered waveguide 1 etch mask preparation: spin coating negative HSQ, the rotational speed is 2000 rpm / min, baked for 120 seconds at 150 ° C hot plate.

[0069]A2) Top-tapered waveguide 1 etch: Ar plasma ICP etching, waveguide etching depth is 300 nm.

[0070]A3) The underlying cone waveguide 2 and the conical sub-wavelength grating 3 etch mask was prepared: spin coating negative HSQ, the rotational speed was 2000 rpm / min, baked on the heat plate of 150 ° C for 120 seconds.

[0071]A4) The underlying cone waveguide 2 and the conical sub-wavelength grating 3 etch: AR plasma ICP dry etching, the waveguide etching depth is 300 nm.

[0072]A5) First SIO2Package 51 Media Growth: PECVD Growth SiO2The cladding medium with a thickness of 1 μm.

[0073]A6) The first layer SiN s...

Embodiment 2

[0080]The 3-inch x-cut lnoi wafer is selected, the lithium niobate film has a thickness of 600 nm, SiO2The insulating layer has a thickness of 2 μm, the substrate is Si material, and the main preparation process step is:

[0081]B1) Top-tapered waveguide 1 etch mask preparation: spin coating photoresist 7908, exposure development After evaporation of metal Ti / Ni20 / 150 nm, soaked in acetone, ultrasonic removal of photoresist, then in ethanol for 5 minutes, then Rinse it with deionized water, and finally put it in the dryer.

[0082]B2) Top-tapered waveguide 1 etch: AR plasma ICP etching, waveguide etching depth is 300 nm.

[0083]B3) Bottomatal cone waveguide 2 and sub-wavegoon 3 etch mask Preparation: Cerectant photoresist 7908, exposure development After evaporation of metal Ti / Ni 20 / 150 nm, and soak it with acetone, ultrasonic removal photoresist, then in ethanol The ultrasound is less than 5 minutes, then rinsed with deionized water, and finally put it in the dryer.

[0084]B4) The und...

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Abstract

The invention discloses an LNOI spot size converter based on a sub-wavelength grating. The LNOI spot size converter comprises a top layer conical waveguide, a bottom layer conical waveguide, a conical sub-wavelength grating, a SiO2 inverted conical thick ridge waveguide cladding, a SiN sub-wavelength grating thin layer and an optical fiber fixing groove. A preparation method of the LNOI spot size converter comprises the following steps of preparation of the top layer conical waveguide and the bottom layer conical waveguide, preparation of the conical sub-wavelength grating, preparation of the SiO2 inverted conical thick-ridge waveguide, preparation of the SiN sub-wavelength grating and preparation of the optical fiber fixing groove. The structure that the double-layer conical waveguide is combined with the conical sub-wavelength grating, the SiN sub-wavelength grating and the SiO2 inverted conical thick ridge waveguide is adopted, the function of amplifying a small-size optical mode field in the LNOI optical waveguide is achieved by adjusting the effective refractive index of the waveguide core layer and the effective refractive index of the cladding, and then the coupling efficiency of the LNOI optical waveguide and the single-mode optical fiber is improved.

Description

Technical field[0001]The present invention relates to an LnOI mold converter and a method of preparing, and more particularly to an LNOi mold converter and a preparation method based on a sub-wavelength grating.Background technique[0002]Lithium lithium niobate (lnoi, lithium niobate on insulator) is an emerging photoelectron-electron integrated material, which is similar to the insulator (SOI, Silicon On Insulator), which is three-layer structure, and the lithium niobate film has high electrical light. The advantage of the coefficient is the preferred material for preparing high-speed electro-optic modulators and optical switches, and lithium lithium niobate has a large refractive index difference (Δn = n).Linbo3 NNSiO2 = 2.2-1.44 = 0.76), the device size and waveguide transmission loss can be reduced, and the substrate has a variety of options, and the application of silicon substrate is most extensive.[0003]The mold converter mainly has two kinds of grating couplers and end-faced ...

Claims

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Application Information

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IPC IPC(8): G02B6/124G02B6/14G02B6/136G02B6/30
CPCG02B6/124G02B6/14G02B6/136G02B6/305G02B2006/1204
Inventor 周奉杰钱广顾晓文唐杰孔月婵
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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