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Boron-gallium co-doped single crystal preparation equipment and preparation method thereof

A single crystal and equipment technology, which is applied in the field of boron-gallium co-doped single crystal preparation equipment and its preparation, can solve the problems of insufficient single crystal performance and silicon atomic valence defects, affecting single crystal life and conversion efficiency, etc. , to achieve the effects of making up for the valence defects of silicon atoms, making up for the lack of performance of single crystals, and improving the life and efficiency of single crystals

Active Publication Date: 2021-05-07
JA SOLAR +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to improve the photoelectric conversion efficiency of cells under light and reduce the attenuation of light electrons, solar-grade monocrystalline silicon introduces tetravalent elements. Solar-grade monocrystalline silicon is usually doped with tetravalent elements such as B, Mg, Al, Zn, and Ga. , but it is a kind of dopant doped into single crystal silicon. Although high resistivity and long life are formed, it is affected by oxygen and other impurities released by the high temperature of the quartz crucible during the production of crystalline silicon.
Due to the different segregation coefficients of doping elements, one dopant cannot effectively avoid the insufficient performance of single crystals and the valence defects of silicon atoms, which affects the lifetime and conversion efficiency of single crystals.

Method used

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  • Boron-gallium co-doped single crystal preparation equipment and preparation method thereof
  • Boron-gallium co-doped single crystal preparation equipment and preparation method thereof
  • Boron-gallium co-doped single crystal preparation equipment and preparation method thereof

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Embodiment 1

[0060] Such as figure 1 , figure 2 and Figure 5 As shown, the preparation method of the boron-gallium co-doped single crystal of this embodiment is as follows:

[0061] Step S1: Add the first raw material to the secondary feeding device 20. The first raw material includes the first silicon material, boron-doped alloy and pure gallium. In this embodiment, the first silicon material includes native polysilicon and non-native polysilicon, native polysilicon and non-native The weight ratio range of virgin polysilicon is 1:4-1:2. It is necessary to calculate the weight of the required first silicon material according to the weight of the first raw material, to ensure that the first silicon material is in the range of 80000-120000 parts by weight in the first raw material, the boron-doped alloy is 80-120 parts by weight, and the pure gallium is 0.5-2 parts by weight, the first silicon material in the present embodiment is 120000 parts by weight, the boron-doped alloy is 100 par...

Embodiment 2

[0097] Such as Figure 5 , Figure 6 , Figure 7 , Figure 8 and Figure 9 As shown, the preparation method of the boron-gallium co-doped single crystal of this embodiment is as follows:

[0098] Step S1: The first raw material selected in this embodiment includes 380kg of the first silicon material, 0.38kg of boron-doped alloy and 3.8g of pure gallium, the weight ratio of boron-doped alloy and pure gallium is 100:1, the first silicon material Including 120kg of primary polysilicon and 260kg of non-primary polysilicon, first uniformly mixing 0.38kg of boron-doped alloy and 380kg of the first silicon material into 380.38kg of mixed raw materials;

[0099] Step S111: In this embodiment, the maximum loading capacity of each barrel of the secondary feeding device 20 is 65 kg, and the mixed raw material of the first silicon material and boron-doped alloy of 380.38 kg needs to be added to the secondary feeding device 20 in six times at least. Device 20, in this embodiment, divi...

Embodiment 3

[0114] Such as Figure 5 , Figure 6 , Figure 7 , Figure 8 and Figure 9 As shown, the preparation method of the boron-gallium co-doped single crystal of this embodiment is as follows:

[0115] Step S1: The first raw material selected in this embodiment includes 330kg of the first silicon material, 0.33kg of boron-doped alloy and 3.3g of pure gallium, the weight ratio of boron-doped alloy and pure gallium is 100:1, the first silicon material Including 110kg of primary polysilicon and 220kg of non-primary polysilicon, first uniformly mixing 0.33kg of boron-doped alloy and 330kg of the first silicon material into 330.33kg of mixed raw materials;

[0116] Step S111: In this embodiment, the maximum loading capacity of each cylinder of the secondary feeding device 20 is 65 kg, and 330.33 kg of the first silicon material and boron-doped alloy mixed raw material need to be added to the secondary feeding device 20 in at least six times. In the embodiment, 330.33 kg of the first...

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Abstract

The invention relates to boron-gallium co-doped single crystal equipment and a preparation method thereof. The equipment comprises a single crystal furnace, a secondary feeding device, a pulling device and a single feeding tubule, the preparation method comprises the following steps that S1, adding a first raw material into the single crystal furnace through the secondary feeding device, wherein the first raw material comprises, by weight, 80000-120000 parts of a first silicon material, 80-120 parts of boron-doped alloy and 0.5-2 parts of pure gallium, melting the first raw material and crystallizing the melted first raw material to obtain a first single crystal rod; taking out the first single crystal rod from a quartz crucible; s2, adding a second raw material into the single crystal furnace through the secondary feeding device, wherein the second raw material comprises, by weight, 160000-200000 parts of a second silicon material, 160-200 parts of boron-doped alloy and 0.5-2 parts of pure gallium, melting the second raw material, and crystallizing the melted second raw material to obtain a second single crystal rod.

Description

technical field [0001] The invention belongs to the technical field of single crystal production, in particular to boron-gallium co-doped single crystal preparation equipment and a preparation method thereof. Background technique [0002] Monocrystalline silicon solar cells have obvious advantages in terms of photoelectric conversion efficiency and cost. Single crystal silicon can form different types of semiconductors by doping different valence elements, namely P-type and N-type semiconductors. In order to improve the photoelectric conversion efficiency of cells under light and reduce the attenuation of light electrons, solar-grade monocrystalline silicon introduces tetravalent elements. Solar-grade monocrystalline silicon is usually doped with tetravalent elements such as B, Mg, Al, Zn, and Ga. , but it is a dopant doped into single crystal silicon. Although high resistivity and high life are formed, it is affected by oxygen and other impurities released by the high temp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/04C30B29/06
CPCC30B15/04C30B29/06Y02P70/50
Inventor 韩庆辉张晓朋赵聚来
Owner JA SOLAR
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