A Class J Power Amplifier

Abstract

The invention discloses a class J power amplifier, which comprises an input-one-to-three power distribution and impedance matching network, a three-way power amplification waveform forming network, a high-frequency filtering phase-shifting network, and a three-way J-type waveform synthesis impedance matching network. The invention adopts the power amplification structure based on the three-way self-bias mode to form a waveform forming network, combines the three-way J-type waveform synthesis technology and the J-type amplifier impedance matching technology, and directly shapes the output voltage waveform of the amplifier into a special voltage half of the J-type amplifier. The sinusoidal waveform avoids the negative impedance limitation of the output network, improves the limit efficiency of the traditional class J amplifier, and makes the circuit have the characteristics of ultra-wideband, high gain, and high power output capability.

Description

technical field [0001] The invention belongs to the technical field of field effect transistor radio frequency power amplifiers and integrated circuits, and in particular relates to the design of a class J power amplifier. Background technique [0002] With the development of communication technology, RF front-end transmitters urgently need ultra-wideband, high-efficiency, high-gain, and high-power power amplifiers to meet the requirements of high-speed, high-reliability, and low-power consumption in communication systems. However, in the design of traditional high-efficiency power amplifiers, the transistors have to work in an overdrive mode, similar to a switch state, which can achieve high-efficiency characteristics, but its bandwidth is very narrow, which does not meet the needs of existing systems. In addition, another feature of overdrive high-efficiency power amplifiers is poor linearity, so the bandwidth and linearity of high-efficiency overdrive switching power ampl...

AI Technical Summary

Problems solved by technology

However, in order to form the special voltage half-sine waveform of the class J amplifier, the fundamental frequency output impedance of the output matching circuit can only be a complex impedance or a negative impedance. Since the negative impedance cannot be realized in practice, only a relatively limited pure reactance can be used. The complex impedance form, but this limits the ultimate efficiency of the traditional class J power amplifier

[0004] In addition, the existing high-efficiency FET power amplifiers are often implemented based on a single common-source transistor, which is limited by a single transistor, and the power output capability and power gain capability are relatively low

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