Ni-modified Nb2O5 gas sensitive element and preparation method and application thereof

Abstract

The invention discloses a Ni-modified Nb2O5 gas sensitive element and a preparation method and application thereof. The preparation method includes the steps that after a washed FTO interdigital electrode slice is subjected to a hydrothermal reaction in a mixed solution containing Ni(NO3)2.6H2O and ammonium niobate oxalate hydrate, the FTO interdigital electrode slice with powdery NiO / Nb2O5 growing on the surface is taken out, washed with deionized water, dried, calcined at high temperature and reduced; and the NixO / Nb2O5 gas sensitive element generated by the in-situ hydrothermal method is prepared. The NixO / Nb2O5 gas sensitive element obtained by the invention shows better response performance to CO2 and H2 under the conditions of room temperature and ultraviolet light, and has good stability and repeatability, the preparation process of the gas sensitive element is simplified, and the NixO / Nb2O5 gas sensitive element has a better application prospect in the aspect of preparation of semiconductor photo-assisted gas sensitive sensors.

Description

technical field [0001] The invention belongs to the technical field of gas sensors, in particular to a Ni x O / Nb 2 o 5 Gas sensor, its preparation method and its application in light-assisted gas sensor. Background technique [0002] With the continuous development of industrial production, the resulting air pollution problem is a major problem that human beings need to solve at present. Gas sensor is an effective means to detect the concentration and composition of harmful gases. It can convert the gas type and concentration information into electrical signals, so as to realize the detection of related gases. Metal-oxide-semiconductor gas sensors have been widely used in gas sensors because of their high sensitivity, fast response time and recovery time, low cost, long service life, and good stability. Semiconductor gas sensors can be divided into N-type and P-type according to the nature of the semiconductor itself. N-type semiconductors include SnO 2 、TiO 2 , ZnO, e...

AI Technical Summary

Problems solved by technology

At present, the commonly used gas sensor is based on gold interdigitated electrode sheet or FTO interdigitated electrode sheet, and is prepared by loading semiconductor material on the surface of the substrate by drip coating method, spin coating method, screen printing method or template method. , the disadvantage of this method is that the preparation process is relatively complicated, and it needs to be carried out in two steps, that is, the powder material is prepared first, and then the membrane gas sensor is prepared, and the prepared gas sensor has poor stability and repeatability.

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