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Miniaturized self-adaptive temperature compensation circuit with high driving capability

A temperature compensation circuit and self-adaptive technology, which is applied in the direction of improving the amplifier to reduce temperature/power supply voltage changes, power amplifiers, etc., to achieve the effect of small size, strong driving ability, and good compensation effect

Pending Publication Date: 2021-04-06
SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the above-mentioned deficiencies in the prior art, a miniaturized adaptive temperature compensation circuit with high driving capability provided by the present invention solves the problem of temperature adaptability of GaN power amplifiers in miniaturized integrated components in the full temperature range

Method used

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  • Miniaturized self-adaptive temperature compensation circuit with high driving capability
  • Miniaturized self-adaptive temperature compensation circuit with high driving capability
  • Miniaturized self-adaptive temperature compensation circuit with high driving capability

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Embodiment Construction

[0022] The specific embodiments of the present invention are described below so that those skilled in the art can understand the present invention, but it should be clear that the present invention is not limited to the scope of the specific embodiments. For those of ordinary skill in the art, as long as various changes Within the spirit and scope of the present invention defined and determined by the appended claims, these changes are obvious, and all inventions and creations using the concept of the present invention are included in the protection list.

[0023] Such as figure 1 As shown, a miniaturized adaptive temperature compensation circuit with high driving capability includes a negative pressure linear stabilizer, an input capacitor Ci, an output capacitor Co, a fixed resistor Ro, an adjustable resistor Radj, and a thermistor Rc. The IN end of the negative pressure linear regulator is connected to one end of the input capacitor Ci and connected to the input voltage Vs,...

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Abstract

The invention discloses a miniaturized self-adaptive temperature compensation circuit with high driving capability. The miniaturized self-adaptive temperature compensation circuit comprises a negative voltage linear stabilizer, an input end capacitor Ci, an output end capacitor Co, a fixed resistor Ro, an adjustable resistor Radj and a thermistor Rc. According to the miniaturized self-adaptive temperature compensation circuit with the high driving capacity, a circuit topological structure based on a thermistor and a negative voltage stabilizer is adopted, grid voltage of a GaN amplifier at different temperatures is generated, and self-adaptive temperature compensation of a GaN device is achieved. According to the circuit, only one thermistor is additionally arranged in a grid power supply circuit of the GaN power amplifier, so that the grid voltage is adaptively adjusted along with the temperature, and the compensation effect is achieved. Full-temperature gain compensation can be realized without increasing extra loss of a transmitting link, the output gate voltage is not influenced by the gate current of the power amplifier, the driving capability is high, the circuit is simple, miniaturization and integration are facilitated, and the full-temperature gain compensation circuit is suitable for being used in a high-power and high-gain microwave assembly adopting a GaN device.

Description

technical field [0001] The invention relates to the technical field of microwave component functional circuits, in particular to a miniaturized self-adaptive temperature compensation circuit with high driving capability. Background technique [0002] GaN power amplifiers have been widely used in various types of electronic equipment. In terms of temperature characteristics, GaN devices have two notable features: first, the typical value of the gain / temperature change rate is 0.02dB / °C per level, which is 2.5 times the change rate of GaAs devices; Big. Therefore, in order to promote the saturated output of the power amplifier, the small signal gain of the power amplifier is high. The superposition of the two factors leads to a large change in the gain of the GaN power amplifier across the temperature. How to make the GaN power amplifier have good temperature adaptability through the temperature compensation method in the application is one of the difficulties in the applic...

Claims

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Application Information

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IPC IPC(8): H03F1/30H03F3/20
CPCH03F1/30H03F3/20
Inventor 周丽吴昌勇揭海王安劳余雷曾超杜立新
Owner SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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