Preparation method and application of hole transport layer nickel oxide film in perovskite battery

A technology of hole transport layer and perovskite battery, which is applied in the field of solar cells, can solve the problems of reducing device efficiency and affecting light transmittance, and achieve the effects of avoiding invalid deposition, easy area enlargement, and improving photoelectric conversion efficiency

Pending Publication Date: 2021-04-06
WUXI UTMOST LIGHT TECH CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, the current existing technologies are all small-area NiO in beakers or watch dishes. x Chemical bath deposition, which deposits NiO on both sides of the substrate x substance, while the NiO on the back of the glass x Will affect light transmittance, thereby reducing device efficiency
At present, small-area batteries are covered with tape on the back to avoid deposition on the back, which is not feasible in large-area industrial continuous production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and application of hole transport layer nickel oxide film in perovskite battery
  • Preparation method and application of hole transport layer nickel oxide film in perovskite battery
  • Preparation method and application of hole transport layer nickel oxide film in perovskite battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] (1) Clean the conductive glass substrate sequentially with industrial cleaning agent, deionized water, and ethanol, and dry it with compressed air, then treat it with ultraviolet and ozone for 15 minutes.

[0051] (2) Add nickel sulfate and potassium persulfate into deionized water and stir to dissolve to obtain a precursor solution with a nickel source concentration of 0.1 mol / L and a potassium persulfate concentration of 0.018 mol / L.

[0052] (3) Alkali is added to the above precursor solution, and the pH value of the precursor solution is adjusted to 8.2.

[0053] (4) Suspend the conductive glass substrate above the precursor solution, make the conductive surface of the conductive glass substrate contact with the precursor solution, and perform chemical bath deposition for 440 s, so as to form a nickel oxide thin film precursor on the conductive surface of the substrate.

[0054] (5) Rinse the product obtained in step (4) with pure water, dry it with an air gun, put ...

Embodiment 2

[0057] Multiple groups of conductive glass substrates formed with nickel oxide thin films prepared in Example 1 were taken respectively, and were further used to prepare perovskite batteries by the same method, and the photoelectric performance test of the obtained perovskite batteries was carried out. The results are shown in Table 1 .

[0058] Table 1 Photoelectric performance test results

[0059]

[0060]

[0061] It can be seen from the above table that the nickel oxide film prepared by the present invention is further used to prepare perovskite cells, and the photoelectric conversion efficiency of perovskite cells can be obtained above 20%. The 30cm×30cm large-area film layer was prepared, and the films in different regions were selected to prepare perovskite batteries. The difference in battery performance was small, indicating that the large-area film had good uniformity and was suitable for large-area industrial production applications.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
conversion efficiencyaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method and application of a hole transport layer nickel oxide film used in a perovskite battery. The method for preparing the hole transport layer nickel oxide thin film used in the perovskite cell comprises the steps of (1) providing a substrate and a precursor solution, wherein the precursor solution contains a nickel source and an oxidizing agent; (2) suspending the substrate above the precursor solution, enabling the conductive surface of the substrate to be in contact with the precursor solution, and carrying out chemical bath deposition so as to form a nickel oxide film precursor on the conductive surface of the substrate; and (3) annealing the product obtained in the step (2) to obtain the nickel oxide film. According to the method, the uniform, compact and thin nickel oxide film can be prepared in a large area, and the method is suitable for industrial production and application.

Description

technical field [0001] The invention relates to the field of solar cells, in particular, the invention relates to a method for preparing a nickel oxide thin film for a hole transport layer in a perovskite cell and an application thereof. Background technique [0002] In just ten years, the conversion efficiency of perovskite solar cells based on metal halides has risen from the initial 3.8% to 25.2%, surpassing other types of thin-film solar cells, and there is still an upward trend, which is far from the theoretical efficiency value of 33%. Slowly shrinking, at the same time, the stability is greatly improved. Therefore, the battery is slowly moving from the laboratory to industrialization. However, the efficiency of the currently certified large-area perovskite batteries and components is still not high, and there is a significant gap between the efficiency of small-area batteries. [0003] Perovskite solar cells mainly have two structures: NIP formal and PIN trans. The ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/00H10K71/12H10K71/40H10K30/10H10K30/80H10K2102/00Y02E10/549Y02P70/50
Inventor 陈瑞
Owner WUXI UTMOST LIGHT TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap