Enhanced and depletion type HEMT integrated device and preparation method

Abstract

The invention relates to an enhanced and depletion type HEMT (high electron mobility transistor) integrated device and a preparation method. Media with different stresses are deposited on a P-type nitride gate layer, the stress of a barrier layer below the P-type nitride gate layer is regulated and controlled, the polarization electric field intensity of the barrier layer is changed, and finally, monolithic integration of P-type nitride gate enhanced and depletion type HEMT devices is realized. When the depletion type semiconductor device is prepared, the P type nitride layer below the gate metal does not need to be etched, etching damage does not exist on the contact interface of the gate metal and the semiconductor, gate electric leakage of the device can be effectively reduced, the switching current ratio of the device is increased, and power consumption is reduced. Compared with a conventional P-type nitride gate enhanced HEMT, the enhanced semiconductor device prepared by the invention has the advantages that the polarization electric field intensity of the barrier layer below the P-type nitride gate layer is weakened, the polarization charge surface density of a heterojunction interface is reduced, and the threshold voltage of the enhanced semiconductor device is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an enhanced and depleted HEMT integrated device and a preparation method for the enhanced and depleted HEMT integrated device. Background technique [0002] Due to the superior characteristics of gallium nitride materials, silicon-based GaN HEMTs have broad development prospects in the field of power switches. Among them, commercial power GaN HEMTs are mainly P-type nitride gate enhancement HEMT devices. However, due to the low threshold voltage and small gate swing of P-type nitride gate-enhanced HEMT devices, in order to give full play to the advantages of GaN materials, it is necessary to monolithically integrate the gate drive circuit with the power GaN HEMT. [0003] In the prior art, based on the p-GaN / AlGaN / GaN epitaxial structure, a common method to achieve monolithic integration of enhancement-mode and depletion-mode devices is: use dry etching process to selectiv...

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Problems solved by technology

[0004] However, when the depletion-mode GaN HEMT device is prepared by completely etching the P-type nitride layer in the above method, there is dry etching damage on the surface of the AlGaN layer below the gate region, which will cause a large amount of damage on the surface of the AlGaN layer. Defects, resulting in uneven distribution of device threshold voltage and large gate leakage current

At the same time, the enhanced HEMT device prepared by selectively etching the P-type nitride layer has a low threshold voltage. In actual circuit applications, there is a risk of false turn-on, which affects circuit safety.

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