Micro-nano composite structure photon integrated chip and preparation method thereof
A technology of micro-nano composite structure and photonic integration, applied in final product manufacturing, sustainable manufacturing/processing, electrical components, etc. Improve the communication rate, increase the degree of overlap of the response spectrum, and reduce the effect of the Stokes effect
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[0059] A method for preparing a photonic integrated chip with a micro-nano composite structure, the steps comprising:
[0060] (1) On the silicon substrate layer 1, a buffer layer 2, an undoped GaN layer 3, an n-type GaN layer 4, an InGaN / GaN multi-quantum well layer 5, and a p-type GaN layer 6 are sequentially grown to prepare an InGaN / GaN multi-quantum well LED epitaxial wafer; InGaN / GaN multi-quantum well LED epitaxial wafer, the In composition is 0.2, the light emission wavelength is 450nm, the period number of InGaN / GaN multi-quantum well layer 5 is 5, the thickness of the InGaN well layer is 3 nm, and the GaN barrier The thickness of the layer is 10 nm; the thickness of the p-type GaN layer 6 is 200 nm;
[0061] (2) Thinning and polishing the back of the silicon substrate layer 1 on the InGaN / GaN multi-quantum well LED epitaxial wafer, and using plasma enhanced chemical vapor deposition (PECVD) to grow a layer 2 on the surface of the InGaN / GaN multi-quantum well LED epit...
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