Atomic layer deposition equipment and process method

Abstract

The invention provides atomic layer deposition equipment and a process method. The atomic layer deposition equipment comprises a cavity, heating tables, carrying discs, a hollow assembly, a bottom extraction opening and a spray head assembly, wherein the carrying discs are located on the top surfaces of the heating tables and are used for bearing a base material, and the carrying discs and the hollow assembly can form an upper extraction path. According to the atomic layer deposition equipment and the process method, a process fluid (such as a precursor) is slowly extracted through the upper air extraction path, a flow field of the process fluid can be stably regulated and controlled, and then the base material in the atomic layer deposition process can be uniformly deposited by the precursor.

Description

technical field [0001] The present invention relates to an atomic layer deposition equipment and a process method, in particular to an atomic layer deposition equipment which forms an upper pumping path through a hollow part and a carrier plate to adjust the flow field of a process fluid, and a process method using the same. Background technique [0002] With the development of integrated circuit technology has matured, the current electronic products are developing towards the trend of light and thin, high performance, high reliability and intelligence. The miniaturization technology of transistors in electronic products is very important. Small-sized transistors will have an important impact on the performance of electronic products. When the size of the transistor is smaller, it can reduce the current transmission time and reduce energy consumption, so as to achieve fast calculation and energy saving. . At present, in tiny transistors, some key thin film layers are almos...

AI Technical Summary

Problems solved by technology

[0005] However, such a large closed chamber requires a large amount of precursors, which will make the process cost prohibitive

Furthermore, if the time of discharging the precursor is not well controlled, then a single pumping device (bottom pumping port) may cause the precursor to form a turbulent flow, which will adversely affect the uniformity of the substrate being deposited.

[0006] In order to reduce the cost of the process, one of the methods is to reduce the volume of the chamber to reduce the amount of the precursor. However, this method will cause the precursor to form a turbulent flow, which will cause the precursor to repeatedly contact the substrate, so that the substrate is uniformly deposited. degree of decline

Images