Perovskite solar cell preparation method based on magnetron sputtering zinc oxide/stannic oxide double electron transport layer

A solar cell and dual electron transfer technology, applied in the field of solar cells, can solve problems such as high cost and restrict long-term development, and achieve the effects of high carrier mobility, high photoelectric conversion efficiency, and improved open circuit voltage.

Active Publication Date: 2021-03-12
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, silicon-based solar cells have the highest market share, but their long-term development is restricted by reasons such as high cost and complicated process.

Method used

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  • Perovskite solar cell preparation method based on magnetron sputtering zinc oxide/stannic oxide double electron transport layer
  • Perovskite solar cell preparation method based on magnetron sputtering zinc oxide/stannic oxide double electron transport layer
  • Perovskite solar cell preparation method based on magnetron sputtering zinc oxide/stannic oxide double electron transport layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] 1. Put the zinc oxide target in the cavity, fix the FTO conductive glass on the target, close the cavity, vacuumize, adjust the oxygen to 6.0-8.0sccm, argon to 45-55sccm, and the air pressure ratio to 1-3pa. Turn on the bipolar pulse power supply, select a sputtering time of 1-6 minutes; take it out of the chamber after sputtering is completed;

[0031] 2. Spin-coat the perovskite layer and the hole layer based on the magnetron sputtering zinc oxide single electron transport layer obtained in the step, and finally evaporate the silver electrode to obtain the calcium oxide based on the magnetron sputtering zinc oxide single electron transport layer. Titanium solar cells.

[0032] The preparation process of the perovskite light-absorbing layer is: take 0.461g of lead iodide (PbI 2 ) and 0.159 g of methylamine iodide (CH 3 NH 3 1) Put the drug into a brown bottle, add 635ul of dimethylformamide (DMF) and 72ul of dimethyl sulfoxide (DMSO) dropwise to the bottle with a pi...

Embodiment 2

[0039] 1. Put the zinc oxide target in the cavity, fix the FTO conductive glass on the target, close the cavity, vacuumize, adjust the oxygen to 6.0-8.0, argon to 45-55, and the air pressure ratio to 1-3pa. Turn on the bipolar pulse power supply, select the sputtering time for 2 minutes; take it out of the chamber after sputtering is completed;

[0040] 2. The film prepared in step 1 is spin-coated with a tin dioxide solution at 3000rmp / 30s, and annealed at 120°C-180°C in air for 30 minutes, so as to obtain a layer of tin dioxide film on the surface of zinc oxide;

[0041] The tin dioxide solution is diluted with tin dioxide hydrosol and water at a volume ratio of 1:5-1:9, then stirred for 40 minutes, and filtered to obtain the required tin dioxide solution.

[0042] 3. Spin-coat the perovskite light-absorbing layer and the hole-transporting layer on the tin dioxide-zinc oxide double electron transport layer obtained in step 2, and finally vapor-deposit silver electrodes, ther...

Embodiment 3

[0050] 1. Put the zinc oxide target in the cavity, and fix the FTO conductive glass above the target, adjust the distance between the target and the FTO conductive glass to be 2-9cm, close the cavity, vacuumize, and adjust the oxygen to 6.0-8.0 sccm, argon 45-55sccm, pressure ratio 1-3pa. Turn on the bipolar pulse power supply, select the sputtering time for 2 minutes; take it out of the chamber after sputtering is completed;

[0051] 2. Spin-coat the film prepared in step 1 with a tin dioxide solution at 3000rmp / 30s, and anneal it in air at 150°C for 30 minutes, so as to obtain a layer of tin dioxide film on the surface of zinc oxide;

[0052] The tin dioxide solution is diluted with tin dioxide hydrosol and water at a volume ratio of 1:5-1:9, then stirred for 40 minutes, and filtered to obtain the required tin dioxide solution.

[0053] 3. Spin-coat the perovskite layer and the hole layer on the double electron transport layer based on tin dioxide and magnetron sputtering z...

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Abstract

The invention discloses a perovskite solar cell based on a magnetron sputtering zinc oxide/stannic oxide double-electron transport layer, and the perovskite solar cell takes magnetron sputtering zincoxide as the electron transport layer, and forms the double-electron transport layer through the spin coating of stannic oxide, thereby improving the mobility of the electron transport layer, improving the compactness of a film, improving the carrier transmission, and improving the photoelectric conversion efficiency and stability of the device. According to the invention, the zinc oxide and stannic oxide electron transport layer can be prepared under a low-temperature condition, and the stable high-performance perovskite solar cell is obtained.

Description

technical field [0001] The invention relates to a solar cell preparation technology, in particular to a method for preparing a perovskite solar cell based on magnetron sputtering zinc oxide / tin dioxide double electron transport layer, and belongs to the technical field of solar cells. Background technique [0002] With the increasingly urgent problems of environmental pollution and energy depletion, finding a renewable green energy to replace traditional fossil energy has become a common concern of all mankind. Solar cells directly convert solar energy into electrical energy, which has the advantages of environmental protection, safety, reliability, and long life, and has become a research hotspot at home and abroad. At present, silicon-based solar cells have the highest market share, but their long-term development is restricted due to reasons such as high cost and complicated process. Therefore, people are gradually turning their attention to new photovoltaic materials wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48C23C14/08C23C14/35C23C14/58
CPCC23C14/086C23C14/35C23C14/5806H10K71/12H10K30/15H10K30/152Y02E10/549
Inventor 牛海红方存龙夏飞周儒万磊谢雨欣邵军
Owner HEFEI UNIV OF TECH
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