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Magnetic tunnel junction structure of magnetic random access memory

A magnetic tunnel junction and random access memory technology, applied in the field of memory, can solve the problems of low surface roughness, difficult to obtain, etc., and achieve the effect of electrical and yield improvement

Pending Publication Date: 2021-03-12
SHANGHAI CIYU INFORMATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When making the seed layer, the heating coating technology is generally used to improve the consistency and uniformity of the crystal orientation of the center-cubic FCC crystal on the antiferromagnetic layer. However, the seed layer needs to have a certain thickness to obtain high-quality crystal orientation. It is also difficult to obtain a relatively low surface roughness

Method used

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  • Magnetic tunnel junction structure of magnetic random access memory
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  • Magnetic tunnel junction structure of magnetic random access memory

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Embodiment Construction

[0023] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the present invention can be practiced. The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention.

[0024] The drawings and descriptions are to be regarded as illustrative in nature and not restrictive. In the figures, structurally similar units are denoted by the same reference numerals. In addition, the size and thickness of each component shown in the drawings are arbitrarily shown for understanding and ease of description, but the present invention is not limited thereto.

[0025] In the drawings, for clarity, understanding, and ease of descript...

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Abstract

The invention provides a magnetic tunnel junction structure of a magnetic random access memory, which is characterized in that an amorphous buffer layer and a crystalline seed layer are arranged between an antiferromagnetic layer and a bottom electrode of the magnetic tunnel junction structure to guide the growth of the antiferromagnetic layer to form a face-centered cubic structure, so that the magnetism of a magnetic tunnel junction unit is facilitated, the electricity and the yield are improved; and the device is miniaturized.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a magnetic tunnel junction structure of a magnetic random access memory. Background technique [0002] Magnetic random access memory (MRAM) in the magnetic tunnel junction (Magnetic tunnel junction; MTJ) with vertical anisotropy (Perpendicular Magnetic Anisotropy; PMA), as a free layer for storing information, has two in the vertical direction The magnetization direction, namely: up and down, corresponds to "0" and "1" or "1" and "0" in binary respectively. In practical applications, when reading information or leaving it blank, the magnetization direction of the free layer will remain unchanged; during the writing process, if a signal different from the existing state is input, the magnetization direction of the free layer will be flipped 180 degrees in the vertical direction. The ability of the magnetization direction of the free layer of the magnetic random access memory to re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12H01L27/22H10N50/10H10N50/01
CPCH10B61/00H10N50/01H10N50/10
Inventor 张云森郭一民陈峻肖荣福
Owner SHANGHAI CIYU INFORMATION TECH
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