Sandwich structure heat dissipation film based on graphene, semiconductor device and preparation method thereof

A technology of graphene film and heat dissipation film, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., to achieve good heat dissipation effect, ensure service performance and life, and the effect of easy implementation of the process

Pending Publication Date: 2021-03-12
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the existing graphene heat dissipation film has a strong heat transfer capability only in the direction parallel or perpendicular to the substrate, which has certain limitations on the heat transfer capability of the graphene heat dissipation film. Therefore, how to further improve the heat transfer capability of the graphene heat dissipation film Thermal capacity is the goal pursued by those skilled in the art

Method used

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  • Sandwich structure heat dissipation film based on graphene, semiconductor device and preparation method thereof
  • Sandwich structure heat dissipation film based on graphene, semiconductor device and preparation method thereof
  • Sandwich structure heat dissipation film based on graphene, semiconductor device and preparation method thereof

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preparation example Construction

[0038] 1) The preparation process of CVD graphene is as follows:

[0039] Remove the oxides on the surface of the metal substrate, wash and dry it, put it into a growth furnace, feed methane and hydrogen, and grow in the temperature range of 1000°C-1300°C for 30-60 minutes to obtain CVD graphene.

[0040] 2) Preparation of redox graphene

[0041] Take 1-2 mg of graphene oxide, put it into 10 ml of deionized water and shake it for 10-60 minutes, and then sonicate for 4-24 hours to obtain a uniformly dispersed graphene oxide dispersion. Graphene oxide is reduced by a reducing agent to obtain redox graphene.

[0042]3) Preparation of sandwich structure composite film

[0043] 3.1) Covered redox graphene

[0044] Structure B was obtained by covering a layer of redox graphene on CVD graphene with a metal substrate. Among them, to cover the redox graphene on the CVD graphene, it is necessary to ensure the flatness and uniformity of the redox graphite. If the flatness of the fil...

Embodiment 1

[0050] The present embodiment prepares the method for the sandwich structure heat dissipation film based on graphene, comprises the following steps:

[0051] 1) Preparation of CVD graphene:

[0052] Clean the copper foil with ethanol, hydrochloric acid and deionized water to remove oxides on the surface, dry it and put it into the growth furnace. CVD graphene was obtained by feeding methane and hydrogen, and growing at 1200° C. for 60 minutes.

[0053] 2) Preparation of redox graphene

[0054] Take 1 mg of graphene oxide, put it into 10 ml of deionized water and shake it for 60 minutes, and then sonicate it for 4 hours to obtain a uniformly dispersed graphene oxide dispersion. Graphene oxide was reduced by hydrazine hydrate to obtain redox graphene.

[0055] 3) Preparation of sandwich structure composite film

[0056] 3.1) Covered redox graphene

[0057] A layer of redox graphene was spin-coated on the surface of CVD graphene on copper foil at a rotation speed of 500-1500...

Embodiment 2

[0067] The present embodiment prepares the method for the sandwich structure heat dissipation film based on graphene, comprises the following steps:

[0068] 1) Preparation of CVD graphene:

[0069] Clean the copper foil with ethanol, hydrochloric acid and deionized water to remove oxides on the surface, dry it and put it into the growth furnace. CVD graphene was obtained by feeding methane and hydrogen, and growing at 1200° C. for 60 minutes.

[0070] 2) Preparation of redox graphene

[0071] Take 1.5 mg of graphene oxide, put it into 10 ml of deionized water and shake it for 60 minutes, and then sonicate it for 4 hours to obtain a uniformly dispersed graphene oxide dispersion. Graphene oxide was reduced by hydrazine hydrate to obtain redox graphene.

[0072] 3) Preparation of sandwich structure composite film

[0073] 3.1) Covered redox graphene

[0074] A layer of graphene oxide is spin-coated on the surface of CVD graphene on copper foil at a speed of 1000 rpm. of mo...

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Abstract

The invention discloses a sandwich structure heat dissipation film based on graphene, a semiconductor device, a preparation method thereof. The heat dissipation film comprises a redox graphene layer and CVD graphene layers, and the CVD graphene layers are arranged on the surfaces of the two sides of the redox graphene layer. The sandwich structure heat dissipation film based on graphene has good heat transfer capability in the direction parallel to or perpendicular to the substrate, so that the substrate or a semiconductor device can be subjected to rapid and uniform heat dissipation.

Description

technical field [0001] The invention belongs to the technical field of heat dissipation and relates to the transfer of graphene and the preparation of nanometer films, in particular to a heat dissipation film with a sandwich structure based on graphene, a semiconductor device and a preparation method thereof. Background technique [0002] The development of chip technology puts forward higher requirements for heat dissipation materials of semiconductor devices. On the one hand, it pursues faster vertical and horizontal heat dissipation speeds, and on the other hand, it requires continuous miniaturization. Graphene has attracted extensive attention in the field of heat transfer due to its excellent thermodynamic properties. Its thermal conductivity is 5300W / m·K, which is more than five times that of copper. Therefore, compared with common metal heat sinks, using graphene as a heat dissipation material is more attractive. There are various preparation methods of graphene mate...

Claims

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Application Information

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IPC IPC(8): H01L23/367H01L23/373
CPCH01L23/367H01L23/3735H01L23/3738
Inventor 李昕朱莉沈鑫杨向红刘康孙岳党鑫胡龙刘卫华韩传余
Owner XI AN JIAOTONG UNIV
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