SOI process silicon controlled rectifier electrostatic discharge protection structure with adjustable maintaining voltage
A technology for electrostatic discharge protection and voltage maintenance, applied in circuits, electrical components, electric solid devices, etc., can solve problems such as high turn-on voltage and low sustain voltage, achieve low turn-on voltage, increase sustain voltage, and realize discharge of ESD current Effect
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[0028] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on The embodiments of the present invention and all other embodiments obtained by persons of ordinary skill in the art belong to the protection scope of the embodiments of the present invention.
[0029] This embodiment provides an SOI process thyristor electrostatic discharge protection structure with adjustable sustain voltage, please refer to figure 1 , figure 1 It is a structural schematic diagram of the structure, specifically including:
[0030] Polysilicon 1, N-type well region 2, first N-type heavily doped region 21, first P-type heavily doped region 22, ultra-shallow trench isolation region 23, P-type well region 3, second N-type heavily dop...
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