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Hot isostatic pressing sintering preparation method of tungsten oxide-based ceramic target material

A hot isostatic pressing sintering and ceramic target technology, which is applied in metal material coating process, vacuum evaporation coating, sputtering coating, etc., can solve the problems that tungsten oxide-based ceramic target materials cannot be prepared, and achieve Effect of promoting lattice collapse, improving sintering activity, and improving n-type conductivity

Inactive Publication Date: 2021-03-09
北京航大微纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing technology cannot prepare this kind of tungsten oxide-based ceramic target material.

Method used

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  • Hot isostatic pressing sintering preparation method of tungsten oxide-based ceramic target material
  • Hot isostatic pressing sintering preparation method of tungsten oxide-based ceramic target material
  • Hot isostatic pressing sintering preparation method of tungsten oxide-based ceramic target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0084] 1. Preparation of doped submicron tungsten oxide-based powder:

[0085] 1) Prepare raw materials: prepare ammonium metatungstate with a purity ≥ 99.99%, and the doping source element components in this embodiment are calculated as Mo:Li:Zr=5:10:1 according to the molar ratio; prepare MoO with the corresponding element ratio 2 , Li 2 O, ZrO 2 Doping source powder, purity ≥ 99.99%; the mass ratio of ammonium metatungstate added to doping source powder is 87:13.

[0086] It is also feasible to purchase other elemental metals, alloy inorganic salts, and organic salts of corresponding elements for the doping source powder, and the effect is similar.

[0087] 2) preparing a premix solution, fully dissolving pure water, organic monomer acrylamide, and crosslinking agent N'N'-methylenebisacrylamide in a weight ratio of 100:10:1 to form a premix solution;

[0088] 3) Preparation of slurry: Add the pure ammonium metatungstate prepared in step 1) and the doping source powder to...

Embodiment 2

[0104] The difference between this example and Example 1 is that the mass fraction of tungsten in the powder is 85% based on tungsten oxide, and the mass fraction of the doping source is 15%. : Zr=10:5:1;

[0105] The remaining steps are the same as in Example 1. The relative density of the obtained tungsten oxide-based ceramics measured by the drainage method is 98.5%, the average grain size is 4.5 μm, the doping elements enter the ceramic lattice, and there is no obvious second phase. The electrical conductivity of the ceramic body is 15S / cm.

[0106] The electron micrographs of the ceramics prepared in this embodiment are as follows: Figure 5 shown.

Embodiment 3

[0108] 1. Preparation of doped submicron tungsten oxide-based powder:

[0109] 1) Prepare raw materials: prepare ammonium metatungstate with a purity ≥99.99%, and the doping source element components of this embodiment are calculated as Ti:Mo:Zr=10:1:1 according to the molar ratio; prepare the oxidation of the corresponding element ratio Titanium, molybdenum oxide, zirconia doping source powder, purity ≥ 99.999%; the mass ratio of added ammonium metatungstate to doping source powder is 92.2:7.8.

[0110] It is also feasible to purchase other elemental metals, alloy inorganic salts, and organic salts of corresponding elements for the doping source powder, and the effect is similar.

[0111] 2) To prepare a premix solution, the pure water and the organic monomer are a combination of polyvinyl alcohol and polyacrylic acid, wherein the ratio of polyvinyl alcohol to polyacrylic acid is 1:1, and the crosslinking agent is polyethylene glycol, polyethylene glycol A combination of alc...

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Abstract

The invention relates to a hot isostatic pressing sintering preparation method of a tungsten oxide-based ceramic target material, wherein the preparation method comprises the following steps: raw material preparation, wherein mixed powder contains high-purity tungsten oxide and doping source powder, a doping source is selected from at least three of Ti, Mo, V, Al, Li and Zr, the purity of the mixed powder is greater than 99.95%, the average particle size is 500 nm-1800 nm, the D50 particle size is 200-750 nm, the quantitative relation of M1, M2, M3, M4 and M5 conforms to the formula defined inthe specification; carrying out powder loading and vacuum degassing; carrying out hot isostatic pressing sintering; taking out a sintered blank after heat preservation is finished; and machining or not machining according to needs. The hot isostatic pressing sintering preparation method can be used for preparing the tungsten oxide-based ceramic target material which is good in conductivity, relatively high in purity, fine in grain size and high in density.

Description

technical field [0001] The invention relates to a method for preparing a ceramic target material, in particular to a method for preparing an n-type tungsten oxide-based ceramic target material by hot isostatic pressing and sintering. Background technique [0002] Tungsten trioxide is an important n-type tungsten oxide semiconductor, which has important applications in the fields of gas-sensing materials, photocatalysis, and new energy. Tungsten trioxide is an anode electrochromic material with excellent performance. The tungsten trioxide ceramic target is prepared into micron and submicron photoelectric thin films by magnetron sputtering, and compounded into thin film photoelectric devices, which can be displayed on large screens and high density. It has broad application prospects in information storage and other fields. Compared with organic photochromic films, WO 3 The film has good stability and low cost. Doping certain elements into WO 3 The density of lattice defec...

Claims

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Application Information

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IPC IPC(8): C04B35/495C23C14/35C04B35/645
CPCC04B35/495C23C14/35C23C14/3414C04B35/6455C04B2235/6562C04B2235/6567C04B2235/96C04B2235/786C04B2235/77C04B2235/44C04B2235/3256C04B2235/3203C04B2235/3244C04B2235/3232C04B2235/3239C04B2235/3217
Inventor 高明张虎张花蕊杨本润
Owner 北京航大微纳科技有限公司
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