Electrostatic protection circuit

Abstract

An electrostatic protection circuit comprises a power supply end, an input bonding pad end, a grounding end, a third PMOS transistor, a third NMOS transistor, an internal circuit and an electrostaticprotection structure. The internal circuit is provided with a first input end, a second input end and a third input end, the first input end is connected with the drain electrode of the third PMOS transistor, the second input end is connected with the input bonding pad end, and the third input end is connected with the drain electrode of the third NMOS transistor; the source electrode of the thirdPMOS transistor is connected with the power supply end, and the grid electrode of the third PMOS transistor is connected with the first control signal end; the source electrode of the third NMOS transistor is connected with the grounding end, and the grid electrode of the third NMOS transistor is connected with a second control signal end; the electrostatic protection structures are located between the second input end and the power supply end of the internal circuit and between the second input end and the grounding end. The electrostatic protection circuit provided by the invention has a very good electrostatic protection function.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an electrostatic protection circuit. Background technique [0002] When an object with static electricity is in electrical contact with a component, the static electricity will be transferred to the component or discharged through the component; or the component itself is charged and discharged through other objects. Both of these processes can damage components, and the degree of damage is related to the mode of electrostatic discharge. There are many sources of static electricity in the actual process, and there are many forms of discharge. However, through the study of the main source of static electricity and the actual electrostatic discharge process, it is believed that there are mainly three modes that cause damage to components: the electrostatic discharge mode of the charged human body (Human Body Model, HBD), the discharge mode of the charged machine ( MachineModel, MM) ...

AI Technical Summary

Problems solved by technology

[0006] However, with the development of advanced manufacturing processes, the thickness of the gate oxide layer in the internal circuit transistor becomes thinner and thinner, and the breakdown voltage of the gate oxide layer in the internal circuit transistor becomes smaller than the junction breakdown voltage of the electrostatic protection transistor, so that the above-mentioned The electrostatic protection circuit fails, and a new electrostatic protection circuit is urgently needed

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