GaN-based epitaxial wafer structure

Abstract

The invention discloses a GaN-based epitaxial wafer structure, and the structure comprises a substrate layer made of a SiC material; a buffer layer which is connected with the substrate layer, whereinthe buffer layer is made of an AlGaN material; an N-type semiconductor layer which is connected with the buffer layer, wherein the N-type semiconductor layer is made of GaN material; a quantum well layer which is connected with the N-type semiconductor layer, wherein the quantum well layer is made of InGaN and GaN materials; a P-type semiconductor layer which is connected with the quantum well layer, wherein the P-type semiconductor layer is made of GaN material; and an ITO layer which is connected with the P-type semiconductor layer. The luminous efficiency of the GaN epitaxial chip structure can be improved based on the GaN epitaxial wafer structure.

Description

technical field [0001] The invention relates to the field of diode LED epitaxial chips, in particular to a structure based on GaN epitaxial wafers. Background technique [0002] GaN is a new type of semiconductor light-emitting device, which has the characteristics of blue-violet light emission, high temperature, high frequency, high pressure, acid and alkali corrosion resistance, and thermal conductivity. It is the most important semiconductor material after GaAs. Due to the higher power density of GaN devices, it can provide greater broadband, higher gain, and can also increase the optical efficiency. GaN devices are used in light-emitting diodes, blue and violet lasers, ultraviolet detectors, electronic devices, etc. GaN-based LEDs mainly use silicon carbide as the substrate. Silicon carbide has good chemical stability, good thermal conductivity, and does not absorb visible light. A common GaN-based LED epitaxial chip structure includes a substrate, an N-type semiconduc...

AI Technical Summary

Problems solved by technology

Although InGaN-based blue-green LEDs have been commercially successful, there is a large lattice mismatch problem between InN and GaN, resulting in a large compressive stress in the InGaN / GaN quantum wells. The local confinement effect of the well is poor, and it is easy to reduce the luminous efficiency

Moreover, compressive stress will affect the effective incorporation of In in the quantum wells, making it difficult to form quantum wells with In components with good crystal quality, so that the efficiency of long-wavelength green LEDs is lower than that of blue LEDs, and the luminous efficiency decreases.

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