Crystal growth apparatus and crystal growth method

Abstract

The invention provides a crystal growth apparatus and a crystal growth method. The crystal growth apparatus comprises a furnace body, a crucible, a cooling sleeve and a guide cylinder, wherein the cooling sleeve is arranged in the furnace body and cools a crystal; the guide cylinder is arranged on the periphery of the cooling sleeve; the guide cylinder comprises an upper guide cylinder part and alower guide cylinder part, the upper guide cylinder part is cylindrical and surrounds the cooling sleeve, the lower guide cylinder part is arranged at the lower end of the upper guide cylinder part and located on the lower side of the cooling sleeve, the lower guide cylinder part is of a hollow big-end-up circular truncated cone structure, a groove is formed in the inner circumferential wall of the circular truncated cone structure, and the top of the groove penetrates through the circular truncated cone structure;and the cooling sleeve moves in the axial direction of the crucible. In the growth apparatus, the cooling sleeve moves along the axial direction of the crucible to influence thermal field distribution in the furnace body, and the temperature gradient at a solid-liquid interface can be finely adjusted, so crystals with a certain width and no defect growth area can be drawn, and the problem that the crystals with considerable defects in the growth area are drawn due to the factthat the temperature gradient of the solid-liquid interface is difficult to control in the prior art is solved.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular, to a crystal growth device and a growth method. Background technique [0002] According to the theory proposed by Voronkov, if the intrinsic defects generated by growth are to be eliminated during the crystal growth process, the axial temperature gradient of the crystal between the solid-liquid interface needs to maintain a certain uniformity along the radial direction, and the crystal growth rate and The ratio V / G of the axial temperature gradient between the solid-liquid interface must be controlled within a certain range. Among them, v is the crystal growth rate, and G is the temperature gradient of the solid-liquid interface. When v / G is greater than a certain critical value, the defects in the crystal tend to be vacant (Vacancy Defect), otherwise, when v / G is less than a certain critical value, the crystal Internal defects tend to be inserted (InterstitialDef...

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Problems solved by technology

However, the position of the guide tube is fixed, and the liquid level position of the molten soup can only be adjusted. As a result, the liquid level at the interface will vibrate, which will affect the crystallization rate of the long crystal.

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