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Equipment and method for preparing perovskite material based on atomization gas-liquid-solid thermal deposition method

A perovskite material, atomizing gas technology, applied in chemical instruments and methods, preparation of amino compounds, preparation of organic compounds, etc. Problems such as low utilization rate, high equipment and operating costs, etc., are beneficial to carrier transport, reducing interface recombination, and saving equipment investment.

Active Publication Date: 2021-01-19
深圳市惠能材料科技研发中心(有限合伙)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current mainstream perovskite material preparation methods have some defects and deficiencies.
For example, the spin coating method is not easy to prepare large-scale high-quality perovskite films, the utilization rate of the perovskite precursor solution is very low, the films prepared by the spray coating method have many holes, and the film quality is poor.
It is worth noting that spin coating, scrape coating, and spray coating are currently the mainstream methods for preparing perovskite films. The common point is that a complete wet film is formed on a specific substrate by some means, and then the wet film is removed by heating. It is difficult to prepare perovskite films with a thickness greater than 1 μm, especially inorganic perovskite films (such as CsPbX 3 , X=Cl, I, Br and other perovskites), and generally require extremely dry conditions to prepare high-quality perovskite films, especially inorganic perovskite films, especially pure inorganic perovskite films Mine film, while achieving dry conditions requires high equipment and operating costs

Method used

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  • Equipment and method for preparing perovskite material based on atomization gas-liquid-solid thermal deposition method
  • Equipment and method for preparing perovskite material based on atomization gas-liquid-solid thermal deposition method
  • Equipment and method for preparing perovskite material based on atomization gas-liquid-solid thermal deposition method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] figure 1 A schematic diagram showing the device and method for preparing perovskite materials based on the atomization thermal deposition method of the present invention. The atomizing part 1 (which is in the form of a nozzle 1 in the figure) continuously atomizes the perovskite material precursor solution obtained by dissolving the perovskite material precursor in a solvent to produce perovskite material precursor atomization Stream 4. The atomized flow 4 of the precursor of the perovskite material is continuously deposited on the deposition part 2 located below the atomization part 1 under the action of gravity to form a deposit 5 of the precursor of the perovskite material including a solvent. At the same time, the heating unit 3 located below the deposition unit 2 continuously heats the deposition unit 2 , so that the perovskite material precursor 5 containing the solvent is formed, and the solvent is volatilized to grow the perovskite material 6 .

[0050] Atomiz...

Embodiment 2

[0056] This example illustrates the preparation of CsPbI by using the equipment and method for preparing perovskite materials based on the atomization gas-liquid solid-thermal deposition method of the present invention 2 Br inorganic perovskite film.

[0057] Weigh 10mmol CsBr powder, 10mmol PbI 2 powder, after it is mixed evenly, be dissolved in 20mL DMSO and DMF mixed solvent (the volume ratio of DMSO and DMF is 5), prepare CsPbI 2 Br precursor solution.

[0058] refer to figure 1 The device shown, makes CsPbI through nozzle 1 2 Continuous atomization of Br precursor solution to form CsPbI 2 Br perovskite precursor atomization flow 4. The atomized flow 4 is deposited on the deposition part 2 below the nozzle 1 under the drive of gravity or gravity and pressurized gas flow, forming a solvent-containing CsPbI 2 Br precursor deposit 5. At the same time, the deposition part 2 is continuously heated at a temperature of 200 ° C by the heating part 3 below the deposition par...

Embodiment 3

[0061] This example illustrates the preparation of MAPbI by using the equipment and method for preparing perovskite materials based on the atomization gas-liquid solid-thermal deposition method of the present invention 3 Organic-inorganic hybrid perovskite films.

[0062] Weigh 10mmol MAI powder, 10mmol PbI 2 Powder, after it is mixed homogeneously, be dissolved in 20mL DMSO and DMF mixed solvent (the volume ratio of DMSO and DMF is 5), prepare MAPbI 3 precursor solution.

[0063] refer to figure 1 The device shown, makes MAPbI through nozzle 1 3 The precursor solution is continuously atomized to form CsPbI 2 Br perovskite precursor atomization flow 4. The atomized flow 4 is deposited on the deposition part 2 below the nozzle 1 under the drive of gravity or gravity and pressurized gas flow, forming a MAPbI containing solvent 3 Precursor deposit 5. At the same time, the deposition part 2 is continuously heated at a temperature of 200 ° C by the heating part 3 below the d...

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Abstract

The invention provides equipment for preparing a perovskite material based on an atomization gas-liquid-solid thermal deposition method, wherein the equipment comprises an atomization part, a deposition part and a heating part; the atomization part is used for continuously atomizing a perovskite material precursor solution obtained through dissolving a perovskite material precursor in a solvent, so as to generate a perovskite precursor atomization flow; the deposition part is used for allowing the perovskite material precursor atomized flow to continuously deposit thereon to form a solvent-containing perovskite material precursor deposit; and the heating part is used for continuously heating the deposition part and volatilizing the solvent to grow the perovskite material while the perovskite material precursor deposit containing the solvent is formed. The invention further provides a method for preparing the perovskite material by adopting the equipment. The equipment and the method disclosed by the invention are carried out in real time by adopting atomization, deposition and heating curing, belong to a gas-liquid-solid method, have high utilization rate on the perovskite materialprecursor solution, and can be used for preparing the perovskite material with adjustable and uniform thickness and large grain size.

Description

technical field [0001] The invention relates to the technical field of photoelectric materials, in particular to a device and method for preparing perovskite materials based on an atomized gas-liquid solid-thermal deposition method. Background technique [0002] Perovskite materials are a class of CaTiO 3 Materials with the same crystal structure, the formula is ABX 3 . In the perovskite material structure, the B-site atoms and the A-site atoms with a larger radius form a cubic close packing, while the X atoms with a smaller radius fill in 1 / 4 of the octahedral voids. According to the difference of A and B atoms, perovskite materials can be divided into organic perovskite materials, organic-inorganic hybrid perovskite materials and inorganic perovskite materials. In particular, the B site is composed of Sn, Ba, Pb, Bi, and B atoms, the X site atom is a halogen element, and the A site is composed of atoms or ions sufficient to form a perovskite lattice such as Cs, formamid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C209/00C07C211/04
CPCC07C209/00C07C211/04Y02E10/549
Inventor 杨世和肖爽钱微
Owner 深圳市惠能材料科技研发中心(有限合伙)
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