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Metal TCO laminated film and preparation method thereof and HIT solar cell

A technology of solar cells and metal film layers, applied in the field of solar cells, can solve the problems of low power generation efficiency of solar cell modules or products, poor effective transmittance of TCO thin films of solar cells, etc.

Pending Publication Date: 2021-01-15
德运创鑫(北京)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the technical problem that the effective transmittance of the TCO film of the HIT solar cell is poor in the prior art, resulting in low power generation efficiency of the solar cell module or product, the object of the present invention is to provide a metal TCO laminated film, specifically The technical scheme is as follows:

Method used

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  • Metal TCO laminated film and preparation method thereof and HIT solar cell
  • Metal TCO laminated film and preparation method thereof and HIT solar cell
  • Metal TCO laminated film and preparation method thereof and HIT solar cell

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preparation example Construction

[0030] In some embodiments, a method for preparing the metal TCO laminated film is provided, comprising the following steps, such as image 3 Shown:

[0031] S1: Provide a single crystal silicon wafer with a doped amorphous silicon film surface;

[0032] S2: forming a TCO base layer on the surface of the doped amorphous silicon film layer of the single crystal silicon wafer;

[0033] S3: forming an amorphous TCO wetting layer on the TCO base layer;

[0034] S4: forming a metal film layer on the amorphous TCO wetting layer;

[0035] S5: forming a TCO surface layer on the metal film layer.

[0036] Specifically, the monocrystalline silicon wafer with a doped amorphous silicon film layer includes a silicon wafer provided with an N-type amorphous silicon layer or a P-type amorphous silicon layer on the surface of a single crystal silicon wafer, or a single crystal silicon wafer Single-crystal silicon wafers with an N-type amorphous silicon layer and a P-type amorphous silicon ...

Embodiment 1

[0054] S1: Provide a single crystal silicon wafer with an N-type doped amorphous silicon film on the surface, the thickness of the single crystal silicon wafer is 150 μm, and the resistivity is 10Ω·cm; the N-type doped amorphous silicon film layer of the single crystal silicon wafer is purged with nitrogen s surface;

[0055] S2: The magnetron sputtering chamber is evacuated, and the pressure of the chamber is evacuated to 5Pa; start and perform pre-sputtering, the pre-sputtering power is 140w, and the pre-sputtering time is 5min; the monocrystalline silicon wafer is preheated, and the heating temperature To 200°C; sputtering coating TCO base layer, sputtering power 140w, sputtering pressure 1.0Pa; sputtering time 5min, annealing treatment, on the surface of N-type doped amorphous silicon film layer of single crystal silicon wafer Form the TCO base layer;

[0056] S3: continue to sputter the amorphous TCO wetting layer, keep the same sputtering conditions, and sputter for 1 m...

Embodiment 2

[0061] S1: Provide a single crystal silicon wafer with an N-type doped amorphous silicon film on the surface, the thickness of the single crystal silicon wafer is 130 μm, and the resistivity is 5Ω·cm; the N-type doped amorphous silicon film layer of the single crystal silicon wafer is purged with nitrogen s surface;

[0062] S2: The magnetron sputtering chamber is evacuated, and the pressure of the chamber is evacuated to 3Pa; start and perform pre-sputtering, the pre-sputtering power is 100w, and the pre-sputtering time is 4min; the monocrystalline silicon wafer is preheated, and the heating temperature is To 180°C; sputtering coating TCO base layer, sputtering power 100w, sputtering pressure 1.0Pa; sputtering time 4min, annealing treatment, on the surface of N-type doped amorphous silicon film layer of single crystal silicon wafer Form the TCO base layer;

[0063] S3: continue to sputter the amorphous TCO wetting layer, keep the same sputtering conditions, and sputter for 1...

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Abstract

The invention provides a metal TCO laminated film, which is used for an HIT solar cell, and comprises a TCO substrate layer, and an amorphous TCO infiltration layer, a metal film layer and a TCO surface layer which are sequentially arranged on the TCO substrate layer, wherein the thickness of the amorphous TCO infiltration layer is smaller than or equal to 10 nm, the thickness of the metal film layer is larger than or equal to 1 nm and smaller than or equal to 30 nm, and the total thickness of the metal TCO laminated film is smaller than or equal to 150 nm. According to the invention, by providing the amorphous TCO infiltration layer and continuously growing the metal film layer under the condition of small thickness, the roughness of the metal film layer is reduced, so that the surface plasmon polaritons are efficiently coupled among the TCO surface layer, the metal film layer and the amorphous TCO infiltration layer due to high refractive index comparison to form surface plasmon polaritons to generate a resonance effect, and the light scattering and photon absorption of the TCO surface layer, the amorphous TCO infiltration layer and the TCO substrate layer are reduced so as to improve the spectral transmittance of the metal TCO laminated film, and improve the electrical property of the HIT battery.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a metal TCO laminated film, a preparation method thereof, and a HIT solar cell. Background technique [0002] A solar cell is a device that directly converts incident sunlight into electrical energy through the photovoltaic effect. The development and utilization of solar energy has become a strategic decision for the sustainable development of energy in all countries in the world. Reducing the cost of solar cells and improving the efficiency of solar cells has always been the development direction of photovoltaic cells. At present, crystalline silicon solar cells occupy about 90% of the photovoltaic market, and the high preparation cost restricts its further development. Compared with crystalline silicon solar cells, HIT (Heterojunction with intrinsic Thin-layer) cells have the characteristics of low-temperature manufacturing process, high stability, high efficiency and lo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/072H01L31/18
CPCH01L31/02167H01L31/02168H01L31/072H01L31/1876Y02E10/50Y02P70/50
Inventor 陈孟杰
Owner 德运创鑫(北京)科技有限公司
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