Low-power-consumption magnetic random access memory and writing and reading method thereof

Abstract

The invention discloses a low-power-consumption magnetic random access memory and a writing and reading method thereof, the memory is mainly composed of a spin orbit moment material layer, a free layer, a tunneling layer, a reference layer, a pinning layer, an electrode and the like, and an antiferromagnetic insulator layer is added between the spin orbit moment material layer and the free layer and used for conducting and amplifying spin current. The writing method comprises the following steps of: writing a parallel state and an anti-parallel state, wherein numbers 0 and 1 are respectively and correspondingly written; and the reading method comprises the following steps of: enabling a current to flow through the tunnel junction from the reading electrode, and then forming a closed loop by the other electrode, so that data reading operation is realized. According to the invention, the current conversion efficiency can be improved, and the critical flip current density is reduced, thereby reducing the write-in power consumption; and according to the method, a writing path and a reading path are completely separated, so that the thickness of a tunneling layer can be increased, and the TMR resistance is improved.

Description

technical field [0001] The invention relates to a low-power-consumption magnetic random access memory and its writing and reading methods, in particular to the field of magnetic random access memory, in particular to a magnetic random access memory driven by spin-orbit moment and its realization method. Background technique [0002] Memory is an important part of the computer architecture, which has an important impact on the speed, integration and power consumption of the computer. In the era of big data, people have higher requirements for memory in terms of power consumption, storage speed and integration, but traditional memory is difficult to take into account all performance indicators at the same time. Non-volatile magnetic random access memory came into being. The latest generation of magnetic random access memory (SOT-MRAM), which realizes data writing based on the spin-orbit moment effect, has significant advantages in data reading and writing speed, stability and...

AI Technical Summary

Problems solved by technology

The above method increases the difficulty of the preparation process, and has a limited effect on the improvement of the spin Hall angle (generally increased by 2-3 times)

[0005] At the same time, the write current in the current SOT-MRAM device usually passes through the spin-orbit moment material layer and the MTJ free layer at the same time, so that part of the current cannot participate in the spin-orbit moment effect.

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