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Plasmon absorber and preparation method thereof

A plasmon and absorber technology, applied in the field of optoelectronic devices, can solve the problems of poor chemical performance stability, difficult application of plasmon absorbers, poor optical absorption performance, etc.

Active Publication Date: 2020-12-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The technical problem to be solved and the technical task proposed by the present invention are to improve the existing technology and provide a plasmonic absorber to solve the problem that the plasmonic absorber in the current technology is difficult to be applied in a high temperature environment and has poor chemical performance stability , The problem of poor optical absorption performance

Method used

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  • Plasmon absorber and preparation method thereof
  • Plasmon absorber and preparation method thereof
  • Plasmon absorber and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Such as figure 1 and figure 2 As shown, a plasmon absorber includes a periodic unit, the periodic unit is a base layer 1, a metal thin film layer 2 and a metal nanoring 3 from bottom to top, and the axis of the metal nanoring 3 perpendicular to the surface of the metal thin film layer 2, and the circumferential periphery of the metal nano-ring 3 is wrapped by a dielectric layer 4, and the inner region of the metal nano-ring 3 is filled by a dielectric layer 4, between the metal nano-ring 3 and The top of the dielectric layer 4 is covered with a protective layer 5 .

[0035] The base layer 1 and the metal thin film layer 2 are squares of the same size and overlapped and stacked together. The metal nano rings 3 are provided with five, one of which is arranged at the central area of ​​the metal thin film layer 2, and the remaining four It is distributed around its circumference, specifically one is set at the four corners of the square metal thin film layer 2, the metal...

Embodiment 2

[0039]The difference from Embodiment 1 is that two metal nanorings 3 of the plasmonic absorber are arranged at intervals on the metal thin film layer 2, and a metal nanoring 3 is respectively arranged at the corners of the metal thin film layer 2. The inner diameters of the nano-rings 3 and the two metal nano-rings 3 are 400nm and 320nm respectively.

[0040] The wall thickness of the metal nanoring 3 is 20nm, the axial height of the metal nanoring 3 is 6 μm, and the side length of the base layer 1 and the metal thin film layer 2 is 900nm, and the thickness of the metal thin film layer 2 200nm, the thickness of the protective layer 5 is 40nm; the base layer 1 is made of alumina, the metal nanoring 3 and the metal thin film layer 2 are made of gold, and the dielectric layer 4 is made of gold. Made of alumina;

[0041] The above-mentioned plasmonic absorber can realize the absorption wavelength range from 300nm to 1500nm, and the average absorption efficiency can reach 94%.

Embodiment 3

[0043] The difference from Embodiment 1 is that the base layer is made of hafnium dioxide, and the dielectric layer 4 is made of hafnium dioxide.

[0044] There are five metal nano-rings 3, and the distribution is the same as in Embodiment 1. The inner diameters of the five metal nano-rings 3 can specifically be d 1 = 400nm, d 2 =360nm, d 3 =280nm,d 4 = 200nm, d 5 =120nm, and the wall thickness of the metal nanoring 3 is 20nm, the axial height of the metal nanoring 3 is 6 μm, and the side length of the base layer 1 and the metal thin film layer 2 is 900nm, the metal thin film The thickness of layer 2 is 200nm, and the thickness of described protective layer 5 is 40nm; Described metal nano ring 3, metal film layer 2 are made of gold;

[0045] The above-mentioned plasmonic absorber can realize the absorption wavelength range from 300nm to 1600nm, and the average absorption efficiency can reach 94%.

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Abstract

The invention discloses a plasmon absorber which comprises a periodic unit, the periodic unit sequentially comprises a substrate layer, a metal film layer and a metal nanoring from bottom to top, theaxial direction of the metal nanoring is perpendicular to the surface of the metal film layer, and the circumferential periphery of the metal nanoring is wrapped by a dielectric layer. The internal area of the metal nanoring is filled with a dielectric layer, and the top of the metal nanoring and the top of the dielectric layer are covered with a protective layer. According to the plasmon absorber, the metal nanoring is wrapped and filled with the dielectric layer, so that the metal nanoring can be effectively protected, and the stability of the metal nanoring is improved; and the dielectric layer has good thermal stability, so that permanent deformation of the metal nanoring in a high-temperature environment is avoided, stable light absorption performance of the plasmon absorber is guaranteed, the working temperature capable of being applied by the plasmon absorber is increased, and the application range is wider.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a plasmon absorber and a preparation method thereof. Background technique [0002] Light absorption is a research hotspot in the field of optics, especially the research on broadband light absorption has attracted people's attention. Nanoscale plasmonic absorbers are small in size, high in sensitivity, easy to mass-produce, etc., and have broad market application prospects. . By properly designing the plasmonic absorber, the light can be confined inside the device. For an ideal broadband plasmonic absorber, wide-angle incidence, polarization insensitivity, and high absorption efficiency are required. The operating temperature of the existing plasmonic absorbers is mostly lower than 1000K, but in the application of solar thermal photovoltaics, the operating temperature will be greater than 1300K, and the traditional plasmonic absorbers are usually exposed to high t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/00
CPCG02B5/003G02B5/008
Inventor 王保清王志明余鹏童鑫林峰巫江
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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