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Preparation method of PERC battery piece

A battery sheet and battery technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of inability to achieve the best passivation effect of aluminum oxide film, poor film density and negative electric field effect, short reaction time, etc. problem, achieve good passivation effect, achieve passivation effect, and reduce the effect of interface recombination

Active Publication Date: 2020-12-11
JINENG CLEAN ENERGY TECH LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, aluminum oxide films are generally deposited at a temperature of about 200°C. Due to the low reaction temperature and short reaction time, the compactness of the film layer and the negative electric field effect are not good, the existing preparation process cannot make the aluminum oxide film passivation effect play to the best

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] A preparation method of a PERC battery sheet, comprising the following steps:

[0061] (1) cleaning and removing the cutting loss layer and metal impurities of the original silicon chip, making cashmere to form a pyramid texture layer, removing the cutting loss layer of the original silicon chip and the weight of metal impurities is 0.38g;

[0062] (2) Put the texturized monocrystalline silicon wafer into the diffusion equipment for diffusion and junction to form a PN junction layer, and carry out laser propulsion on the surface of the PN junction layer of the diffused single crystal silicon wafer, and the surface resistance of the PN junction layer is 120Ω, laser advance depth 0.05μm, line width 70μm;

[0063] (3) Etch and clean the monocrystalline silicon wafer after laser advancement, remove the phosphosilicate glass at the edge, and polish the back of the monocrystalline silicon wafer to remove the PN junction layer on the back, and the etching thinning amount is 0....

Embodiment 2

[0073] A preparation method of a PERC battery sheet, comprising the following steps:

[0074] (1) cleaning and removing the cutting loss layer and metal impurities of the original silicon chip, making cashmere to form a pyramid texture layer, removing the cutting loss layer of the original silicon chip and the weight of metal impurities is 0.45g;

[0075] (2) Put the texturized monocrystalline silicon wafer into the diffusion equipment for diffusion and junction to form a PN junction layer, and carry out laser propulsion on the surface of the PN junction layer of the diffused single crystal silicon wafer, and the surface resistance of the PN junction layer is 140Ω, laser advance depth 0.05μm, line width 100μm;

[0076] (3) Etching and cleaning the monocrystalline silicon wafer after laser advancement, removing the phosphosilicate glass at the edge, and polishing the back of the monocrystalline silicon wafer to remove the PN junction layer on the back, and the etching thinning ...

Embodiment 3

[0086] A preparation method of a PERC battery sheet, comprising the following steps:

[0087] (1) cleaning and removing the cutting loss layer and metal impurities of the original silicon chip, making cashmere to form a pyramid texture layer, removing the cutting loss layer of the original silicon chip and the weight of metal impurities is 0.58g;

[0088] (2) Put the texturized monocrystalline silicon wafer into the diffusion equipment for diffusion and junction to form a PN junction layer, and carry out laser propulsion on the surface of the PN junction layer of the diffused single crystal silicon wafer, and the surface resistance of the PN junction layer is 160Ω, laser advance depth 0.05μm, line width 130μm;

[0089] (3) Etching and cleaning the monocrystalline silicon wafer after laser advancement, removing the phosphosilicate glass at the edge, and polishing the back of the monocrystalline silicon wafer to remove the PN junction layer on the back, and the etching thinning ...

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Abstract

The invention discloses a preparation method of a PERC battery piece. The preparation method comprises the following steps: (1) cleaning and texturing; (2) performing diffusion and laser propulsion; (3) etching, polishing and removing phosphorosilicate glass; (4) carrying out Al2O3 atomic deposition on the back surface of the polished monocrystalline silicon wafer; (5) coating the front surface ofthe monocrystalline silicon wafer subjected to back passivation; (6) carrying out back surface coating on the monocrystalline silicon wafer subjected to front surface coating; (7) carrying out lasergrooving on the monocrystalline silicon wafer with the back surface coated with the film; and (8) performing silk-screen printing and sintering to obtain the PERC battery piece. The preparation methodof the PERC battery piece is simple, lattice defects of the silicon wafer can be reduced, the minority carrier lifetime is prolonged, the passivation effect of the back surface of the silicon wafer is better, and the conversion efficiency of the battery piece is further improved.

Description

technical field [0001] The invention belongs to the technical field of PERC batteries, and more specifically relates to a preparation method of PERC battery sheets. Background technique [0002] PERC battery (Passivated Emitter and Rear Cell) is a structure of battery. PERC cells have high conversion efficiency and low production costs, and have become the mainstream technology in the current cell manufacturing industry. The core of this technology is to deposit a thin film of aluminum oxide on the back of the silicon wafer and cover it with a silicon nitride film to passivate the back surface of the silicon wafer, improve the long-wave response, and improve the conversion efficiency of the cell. [0003] At present, the existing technologies mainly use atomic layer deposition (ALD) and plasma enhanced chemical vapor deposition (PECVD), which can achieve better passivation on the surface of silicon wafers and reduce the minority carrier recombination on the surface of silic...

Claims

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Application Information

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IPC IPC(8): H01L31/042H01L31/0216H01L31/18
CPCH01L31/042H01L31/02161H01L31/1868Y02E10/50Y02P70/50
Inventor 陈鸿张伟王路路聂文君王菲穆晓超李叶宁鲁豪李文敏
Owner JINENG CLEAN ENERGY TECH LTD
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