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Thermosetting resin composition for third-generation semiconductor device packaging and preparation method thereof

A resin composition and device encapsulation technology, used in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve the problems of harsh processing and molding conditions, high brittleness of the cured product, and high curing temperature, and overcome the relatively high brittleness. The effect of large, good toughness and high flexural strength

Active Publication Date: 2021-10-12
JIANGNAN UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the technical problems of high melting point, high curing temperature, harsh processing and molding conditions, high brittleness and insufficient toughness of the cured product in the application of traditional bismaleimide resin, and to achieve high heat resistance, in order to achieve Application of thermosetting resin composition in packaging of third-generation semiconductor devices, the invention provides a thermosetting resin composition for packaging of third-generation semiconductor devices and a preparation method thereof

Method used

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  • Thermosetting resin composition for third-generation semiconductor device packaging and preparation method thereof
  • Thermosetting resin composition for third-generation semiconductor device packaging and preparation method thereof
  • Thermosetting resin composition for third-generation semiconductor device packaging and preparation method thereof

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Embodiment 1～3

[0054] The raw materials used in Examples 1 to 3 of the present invention and consumption are as shown in Table 1 below:

[0055] Table 1

[0056]

[0057] A method for preparing a third-generation semiconductor device packaging thermosetting resin composition according to Embodiments 1 to 3 of the present invention comprises the following steps:

[0058] S1, the preparation of blend A

[0059] According to the ratio shown in Table 1, melt bis(3-ethyl-5-methyl-4-maleimidophenyl)methane (BMI-70) at 170°C, and then add phenol-type novolak resin (PF-8011), after melting and mixing for 5 minutes, it was naturally cooled to room temperature to obtain the blend A.

[0060] Preparation of S2, blend B

[0061] According to the ratio shown in Table 1, melt the phenolic novolac resin (PF-8011) at 160°C, then add 2-ethyl-4-methylimidazole (2-Et-4-MZ), stir and mix for 1h After that, it was naturally cooled to room temperature to obtain the blend B.

[0062] Preparation of S3, ble...

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Abstract

The invention relates to the technical field of electronic packaging materials, in particular to a thermosetting resin composition for third-generation semiconductor device packaging and a preparation method thereof. The thermosetting resin composition comprises maleimide resin, phenolic resin, epoxy resin, curing accelerator, inorganic filler and epoxidized 1,2-polybutadiene, wherein maleimide resin contains at least two Maleimide group. The thermosetting resin composition can be rapidly cured at 160-190°C, and is suitable for curing molding methods such as transfer molding, compression molding, and injection molding of existing epoxy molding compounds; the cured product has high bending strength and glass transition temperature And thermal stability, while having a low dielectric constant and dielectric loss, suitable for third-generation semiconductor device packaging.

Description

technical field [0001] The invention relates to the technical field of electronic packaging materials, in particular to a thermosetting resin composition for third-generation semiconductor device packaging and a preparation method thereof. Background technique [0002] In recent years, silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), gallium oxide (Ga 2 o 3 ), diamond and other third-generation semiconductor materials are developing rapidly. Compared with the first-generation (Si) and second-generation (GaAs) semiconductor materials, the third-generation semiconductor materials have wider band gaps, higher breakdown electric fields, higher thermal conductivity, higher electron Saturation rate and higher radiation resistance are more suitable for the production of high-temperature, high-frequency, radiation-resistant and high-power devices. In the future, it will play an important role in various modern industrial fields, including 5G communications, Internet...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L79/08C08L61/06C08L63/00C08L15/00C08K7/16C08K3/04C08K5/5435H01L23/29
CPCC08K2201/005C08K2201/014C08L79/085C08L2203/206C08L2205/035H01L23/295C08L61/06C08L63/00C08L15/00C08K7/16C08K3/04C08K5/5435
Inventor 魏玮周洋龙费小马李小杰翁根元
Owner JIANGNAN UNIV
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