Manufacturing method of memory device and capacitor thereof

Abstract

The invention discloses a manufacturing method of a memory device. The manufacturing method comprises the following steps: providing a semiconductor substrate; forming a first interconnection structure, wherein the first interconnection structure comprises capacitor conductive columns, bit line conductive columns and a first dielectric layer between the conductive columns; forming a first bit lineconductive plug, wherein the first bit line conductive plug comprises metal conductive columns electrically connected with the bit line conductive columns and a second dielectric layer between the metal conductive columns; forming a third dielectric layer and a hard mask layer in sequence; patterning the hard mask layer through photoetching and etching processes, performing etching by taking thepatterned hard mask layer as a mask, forming deep holes in the second dielectric layer and the third dielectric layer, then removing the hard mask layer, and exposing the capacitor conductive columnsat the bottoms of the deep holes; forming a first electrode layer; forming a high-K ferroelectric oxide layer and a second electrode layer; and forming a metal interconnection, a board line and a bitline.

Description

technical field [0001] The invention relates to the field of manufacturing of memories. Specifically, the present invention relates to a manufacturing method of a storage device and a capacitor thereof. Background technique [0002] Ferroelectric memory is a non-volatile memory of a special process. When an electric field is applied to the ferrotransistor, the central atom follows the field and stops at the first low-energy state position, while when an electric field reversal is applied to the same ferrotransistor, the central atom moves in the crystal along the direction of the electric field and stops at The second lowest energy state. A large number of central atoms move and couple in the crystal unit cell to form ferroelectric domains, and the ferroelectric domains form polarized charges under the action of an electric field. The polarization charge formed by the ferroelectric domain reversal under the electric field is higher, and the polarization charge formed by t...

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Problems solved by technology

like figure 2 As shown, the existing planar ferroelectric capacitor 102 occupies a large area, which limits the integration of the ferroelectric memory cell

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