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SOI active adapter plate for three-dimensional packaging and preparation method thereof

A three-dimensional packaging and transition board technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, and electrical solid-state devices, etc., can solve problems such as short-channel effect latch-up effect, affect device performance, etc., to suppress short-channel effect. and the effect of latch-up

Pending Publication Date: 2020-11-03
FUDAN UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, CMOS devices, such as CMOS inverters, are prone to short-channel effects and latch-up effects on interposer boards based on silicon materials, thereby affecting device performance.

Method used

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  • SOI active adapter plate for three-dimensional packaging and preparation method thereof
  • SOI active adapter plate for three-dimensional packaging and preparation method thereof
  • SOI active adapter plate for three-dimensional packaging and preparation method thereof

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Embodiment Construction

[0015] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. It should be understood that the specific The examples are only used to explain the present invention, not to limit the present invention. The described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0016] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "vertical" and "horizontal" are based on the orientation or positional relation...

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Abstract

The invention discloses an SOI active adapter plate for three-dimensional packaging and a preparation method thereof. An SOI is adopted as a substrate, and a CMOS inverter is prepared on top silicon of the SOI by adopting a standard integrated circuit manufacturing process, so a short-channel effect and a latch-up effect can be inhibited. A through hole structure is etched on an SOI substrate between a PMOS transistor and an NMOS transistor of the CMOS inverter; on the one hand, the through hole structure can be used as a conductive channel for connecting chips in the vertical direction; on the other hand, the through hole structure can be used as an electrical isolation layer between the PMOS transistor and the NMOS transistor.

Description

technical field [0001] The invention belongs to the field of integrated circuit packaging, and in particular relates to an SOI active adapter board for three-dimensional packaging and a preparation method thereof. Background technique [0002] With the rapid development of integrated circuit technology, microelectronic packaging technology has gradually become the main factor restricting the development of semiconductor technology. In order to realize the high density of electronic packaging, obtain better performance and lower overall cost, technicians have developed a series of advanced packaging technologies. Among them, the three-dimensional system-in-package technology has good electrical performance and high reliability, and can achieve high packaging density at the same time, and is widely used in various high-speed circuits and miniaturized systems. [0003] Through Silicon Via (TSV) interposer technology is a new technology for interconnection of stacked chips in t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L23/48H01L21/84
CPCH01L27/1207H01L23/481H01L21/84H01L2224/11H01L21/76898H01L27/1203H01L21/823871H01L27/092H01L27/0921H01L21/823878H01L21/76841
Inventor 朱宝陈琳孙清清张卫
Owner FUDAN UNIV
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