Communication optical amplifier and photodiode detector integrated element and preparation method thereof

Abstract

The invention discloses an optical amplifier and photodiode detector integrated element for communication and a preparation method thereof. The integrated element comprising a substrate, wherein a photodiode active layer, an optical amplifier active layer and a spot-size converter structure layer are sequentially arranged on the substrate; the spot-size converter structure layer is positioned on one side close to the light receiving end surface of the integrated element; the bottom surface of the spot-size converter structure layer is lower than the bottom surface of the optical amplifier active layer; and the photodiode active layer and the optical amplifier active layer are covered with a first cladding layer, the first cladding layer and the spot-size converter structure layer are covered with a second cladding layer, the second cladding layer is sequentially covered with a contact layer and a p-metal electrode layer from bottom to top, and the lower surface of the substrate is plated with an n-metal electrode layer. The spot-size converter is used as a semiconductor optical waveguide structure, so that the light coupling efficiency is improved; and an edge coupling mode is adopted to introduce incident light into an integrated detector element, so the technological process is simplified, and domestication batch production of optical detectors at the receiving end of a system of 50G PON or above can be achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optical detectors for communication, and in particular relates to an integrated component of an optical amplifier and a photodiode detector for communication and a preparation method. Background technique [0002] With the increase of the capacity demand of the communication network, the existing 10G PON network needs to further increase the system bandwidth to meet the demand of the future market. In the next stage of system bandwidth improvement, it is expected that higher-speed systems such as 25G PON, 50G PON and even 100GPON will be considered; the improvement schemes for these systems are mainly based on the use of more mature 25G devices. Compared with 10G PON, we are committed to the development of 25G PON is the least difficult, but due to the small increase in speed, it will still face speed bottlenecks in the future. Therefore, the development of systems above 50G PON has been sta...

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Problems solved by technology

[0004] The current solution at home and abroad is to integrate SOA on the laser at the transmitting end to increase the optical power at the transmitting end to meet the high sensitivity requirements at the receiving end. This solution causes the integrated SOA laser at the transmitting end to be only compatible with a very small number of large manufacturers in the United States and Japan. According to the discussion, due to the high price and the constraints of the manufacturer, the 50G PON system that was originally expected to use the generally mature 25G optical device plus PAM4 modulation technology has become extremely high in development costs and technology restrictions, and has lost its original meaning.

[0005] In order to solve this problem, SOA (optical amplifier) ​​and PIN (photodiode) integrated technology detector elements can be used. Generally speaking, the incident light is introduced into the detector to reduce the coupling loss, and the detector has a large light receiving area. Optical cavity design, so SOA (optical amplifier) ​​and PIN (photodiode) integrated components must also adopt a vertical optical cavity design with a large light-receiving area, but this method will increase the complexity of semiconductor epitaxy technology, and each layer in the epitaxial layer The design and process control of the design and process control need to have a certain precision, which raises the technical threshold of mass production

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