High-resolution low-temperature flexible strain resistance switch and preparation method thereof

Abstract

The invention relates to the field of functional oxide film materials. The invention relates to a strain resistance switch, in particular to a high-resolution low-temperature flexible strain resistorswitch and a preparation method thereof. The high-resolution low-temperature flexible strain resistance switch comprises a substrate, a SrTiO3 buffer layer arranged on the surface of the substrate anda La2 / 3Ca1 / 3MnO3 film arranged on the surface of the SrTiO3 buffer layer, and the substrate is of a two-dimensional layered structure. The preparation method comprises the following steps that the SrTiO3 buffer layer is prepared on the upper surface of the substrate of the two-dimensional layered structure through laser pulse deposition, the La2 / 3Ca1 / 3MnO3 film is prepared on the upper surface ofthe SrTiO3 buffer layer through laser pulse deposition, and the thickness of the substrate of the two-dimensional layered structure is reduced from the lower surface through mechanical stripping, sothat the substrate of the two-dimensional layered structure reaches the preset thickness. The resolution of the high-resolution low-temperature flexible strain resistance switch can reach 105 level, and the high-resolution low-temperature flexible strain resistance switch is simple and practical in flexible operation, is suitable for an ultralow-temperature environment, and has a wide applicationprospect in the fields of flexible miniaturized electronic devices, resistive random access memories and sensors.

Description

technical field [0001] The invention relates to the field of functional oxide film materials, in particular to a high-resolution low-temperature flexible strain resistance switch and a preparation method thereof. Background technique [0002] The rapid development of electronic information technology poses new challenges to the existing flash memory technology, and new generation memory technologies such as magnetoresistive memory, ferroelectric memory, phase change memory, and resistive change memory are all developing rapidly. Resistive memory devices based on resistive switching effects have gradually become a research hotspot in the field of memory devices due to their higher speed, larger capacity, lower power consumption, smaller size, and non-loss characteristics. However, resistive memory is mainly regulated by electric field, and its working temperature is around room temperature. With the flexibility of electronic devices and the low temperature of the working env...

AI Technical Summary

Problems solved by technology

However, how to prepare highly flexible films with high resolution at low temperature has become the bottleneck of flexible low temperature resistance switches.

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