Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for simulating nerve synaptic function by utilizing light and proton coupling effect

A technology of nerve synapse and function, applied in the field of analog synapse, can solve the problem of high device power and so on

Pending Publication Date: 2020-10-16
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The currently reported photoelectric synapse devices are mainly based on the photoelectric effect of the material. At this time, the current of the device is mainly the photogenerated electron current, and the power of the device is relatively large.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for simulating nerve synaptic function by utilizing light and proton coupling effect
  • Method for simulating nerve synaptic function by utilizing light and proton coupling effect
  • Method for simulating nerve synaptic function by utilizing light and proton coupling effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The method for simulating the synaptic function of the proton conductor device in this embodiment is as follows: select two adjacent electrodes in the electrode array and connect them to the electrical performance tester, one of the electrodes is grounded, and a pulse voltage is applied to the other electrode. The scheme of applying the pulse voltage is: the voltage is 0.3V, and the duration of the pulse is 400s.

[0038] The lighting scheme is: when the electrical stimulation lasts for 133s, turn on the light source, apply light and last for 133s (optical power density is 8mW / cm 2 ), then turn off the light source and remove the light. The obtained current-time curve is as follows image 3 As shown, it shows that on the basis of the STD characteristics, the STF characteristic is generated when the light is illuminated, but because its absolute amplitude is small and the rate of signal increase is smaller than the decay rate of the STD signal, the current signal decrea...

Embodiment 2

[0041] The only difference between the simulation method of the synaptic function of the proton conductor device in this embodiment and the method in Embodiment 1 is that the scheme of applying pulse voltage on the other electrode is: the voltages are respectively 0.25V, 0.5V, 0.75V, 1.0V, 1.25V, 1.5V, the duration of the pulse applied at each voltage is 108s.

[0042] The lighting scheme was as follows: when the electrical stimulation lasted for 36s, turn on the light source, and apply light for 36s (the optical power density was 8mW / cm 2 ), then turn off the light source and remove the light. The resulting current-time curve is Figure 4 As shown, it shows that on the basis of the STD characteristics, the STF characteristic is generated when the light is illuminated, but because its absolute amplitude is small and the rate of signal increase is smaller than the decay rate of the STD signal, the current signal decreases in the later stage. When the light is removed, the dev...

Embodiment 3

[0045] The only difference between the simulation method of the synapse function of the proton conductor device in this embodiment and the method in embodiment 2 is that the scheme of applying a pulse voltage on the other electrode is: the voltage is 0.5V, and the duration of the pulse is 260s.

[0046] The lighting scheme was as follows: when the electrical stimulation lasted for 60 s, turn on the light source, apply light for 12 s, then turn off the light source and keep it for 12 s, with the light source on and off as a cycle, a total of 7.5 continuous cycles. The optical power density of the light source is 8mW / cm 2 . The obtained current-time curve is as follows Figure 5 As shown, it is shown that on the basis of the STD characteristic, the STF characteristic is produced during illumination, but because its absolute amplitude is small and the rate of signal increase is smaller than that of the initial stage of the STD signal (in this embodiment, when it is the first cyc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for simulating a nerve synaptic function in a proton conductor device by utilizing a light and proton coupling effect. The proton conductor device consists of a substrate, a proton conductor film and an electrode array which are sequentially arranged from bottom to top, and the method comprises the following steps of: irradiating the proton conductor film between two electrodes to which an electric signal is applied by using light, and measuring a photoelectric response signal generated by the proton conductor film under illumination by using the two electrodes. According to the method, the proton conductor film is used as a functional layer of the artificial synaptic device, illumination is introduced to induce the generation of a coupling effect between light and protons, and current generated by proton migration is used as an output signal of the device, so that coupling between two or more synaptic plasticity is realized, and the power of the deviceduring operation is remarkably reduced.

Description

technical field [0001] The invention relates to the technical field of simulated synapses, in particular to a method for simulating synaptic functions by using light and proton coupling. Background technique [0002] Artificial intelligence (AI) technology has developed very rapidly in recent years and has provided great support for progress in many fields. At present, the development of most artificial intelligence products is based on the traditional von Neumann architecture of artificial neural networks (artificial neural networks, ANNs). The information processing method of the human brain is extremely efficient, and the artificial neural network simulates this processing method in the form of integrated circuits. However, when the von Neumann architecture constructs a deep neural network, because its data processing and storage units are physically separated, the data transmission process will inevitably consume a lot of energy and time. The concept of morphological c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06N3/067
CPCG06N3/0675
Inventor 诸葛飞徐慧文鹿文博张莉
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com