Flat plate type PECVD equipment microwave iron source process gas spraying device

Abstract

The invention discloses a flat plate type PECVD equipment microwave iron source process gas spraying device. The device comprises multiple ion sources arranged in the Y axis direction, the ion sourcescomprise multiple gas supply pipes, multiple gas spray holes are formed in the gas supply pipes in the X axis direction, X-axis coordinates of all the gas spray holes for conveying same process gas are different and arranged at equal intervals after superposition, according to the gas spraying device, due to the fact that the number of the gas spray holes in the same length is greatly increased,the interval between two gas spray points is very small, equivalently, the number of the gas spray holes can be multiplied on a gas spray pipe on the same length, the gas spray holes are distributed at equal distances, similarly, gas spray of the whole gas supply pipe is in linear state, and gas is very uniform.

Description

technical field [0001] The invention relates to flat-plate PECVD equipment, in particular to a microwave ion source process gas injection device for flat-plate PECVD equipment. Background technique [0002] PECVD (Plasma Enhanced Chemical Vapor Deposition) refers to the plasma enhanced chemical vapor deposition method, which uses microwave or radio frequency to ionize the gas (such as silane and ammonia) containing the atoms of the film components to form plasma locally, and the plasma is chemically active Very strong, chemical reactions can be carried out at lower temperatures, and desired films (such as aluminum oxide and silicon nitride films) are deposited on the substrate. Flat-plate PECVD equipment uses a combination of multiple sets of microwave sources. Since the thickness of the film grown by a single microwave source is basically fixed, the combination of multiple microwave sources is required to increase the film thickness, and the uniformity of the process gas in...

AI Technical Summary

Problems solved by technology

Although this air injection device ensures the uniformity of each row of air injection holes along the X-axis direction, due to the influence of the hole spacing, the airflow density between the two holes will be relatively small, and when the graphite frame carrying the silicon wafer is along the Y-axis direction During movement, the place with high airflow density is always at the same X-axis coordinate of the silicon wafer, and the place with low airflow density is always at the same X-axis coordinate, that is, when the silicon wafer passes through all microwave sources, the place with high airflow density is always at the highest , where the receiving air density is low is always low

This leads to non-uniform film growth

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