Spin orbit torque magnetic random access memory unit, memory array and memory

Abstract

The invention provides a spin orbit torque magnetic random access memory unit, a memory array and a memory. The spin orbit torque magnetic random access memory unit comprises a magnetic tunnel junction and a gating device; the gating device is a two-dimensional material-based gating device; the magnetic tunnel junction is arranged above the gating device; the magnetic tunnel junction comprises anantiferromagnetic layer and a free layer, and the free layer is adjacent to the antiferromagnetic layer; when the gating device is turned on, the memory unit is turned on, current generates spin current to be injected into the free layer, and the magnetization direction of the free layer is turned over under the action of the exchange bias effect of the free layer and the antiferromagnetic layer.An exchange bias effect is utilized without an external field, deterministic magnetization overturning of the SOT-MRAM memory cell under a room-temperature zero magnetic field can be achieved by applying a magnetic tunnel junction optimization bias voltage, the purpose of data writing is achieved, and the SOT-MRAM memory unit of a double-end structure is achieved.

Description

technical field [0001] The present disclosure relates to the field of magnetic random access memory, in particular to a three-dimensionally integrated spin-orbit torque magnetic random access memory unit, a storage array and a memory without directional magnetization flipping in an external field. Background technique [0002] The unprecedented demand for computing power of data processing chips due to the rapid development of global informatization has brought huge challenges to the existing memory architecture, and also drives the continuous innovation of new storage technologies. Traditional silicon-based storage technology is approaching its limit, highlighting the barriers in energy consumption, read and write speed, reliability and storage capacity, which has prompted the rapid development of various new types of memory in recent years. As one of the new types of memory, Magnetic Random Access Memory (MRAM) has the advantages of high read and write speed, low power con...

AI Technical Summary

Problems solved by technology

First of all, when data is written, SOT-MRAM needs to add an auxiliary in-plane static magnetic field, which is not conducive to the manufacture and miniaturization of SOT-MRAM; secondly, traditional three-terminal SOT-MRAM occupies more space than two-terminal devices such as STT-MRAM. Large area is not conducive to further improvement of storage capacity

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