Integrated GaN device and preparation method thereof

Abstract

The invention provides an integrated GaN device and a preparation method thereof. The preparation method comprises the following steps: preparing source and drain electrodes of different devices on asemiconductor epitaxial structure, preparing a device isolation structure, etching an epitaxial cap layer and a barrier layer, preparing a gate opening for exposing a GaN channel layer, removing the epitaxial cap layer and the barrier layer by adopting different processes, preparing a gate dielectric layer and a gate structure to obtain different devices, and preparing an interconnection electrodestructure to realize device interconnection. According to the invention, a first device and a second device are effectively integrated on the same semiconductor epitaxial substrate, so that various feasible designs are provided for circuit design, and parasitism and cost are reduced; through the process design, except for etching of the gate opening, other steps are carried out at the same time,so that the process difficulty is not increased, and the subsequent packaging cost is saved while the overall performance of the device is improved; and for etching of the epitaxial cap layer and thebarrier layer in the gate opening forming process, the etching precision can be better controlled, and damage to materials caused by traditional etching is avoided.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit manufacturing, and in particular relates to an integrated GaN device and a preparation method thereof. Background technique [0002] The research and application of GaN materials is the frontier and hot spot of global semiconductor research at present. It is a new semiconductor material for the development of microelectronic devices and optoelectronic devices. Together with semiconductor materials such as SIC and diamond, it is known as the successor to the first generation of Ge, Si Semiconductor materials, second-generation GaAs, and the third-generation semiconductor materials after InP compound semiconductor materials. It has properties such as wide direct band gap, strong atomic bond, high thermal conductivity, good chemical stability (hardly corroded by any acid) and strong radiation resistance. It is used in optoelectronics, high temperature and high power devices and high I...

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an integrated GaN device and its preparation method, which is used to solve the problem in the prior art that it is difficult to effectively integrate GaN-based heterogeneous devices on the same wafer

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