A high temperature resistant silicon carbide pressure sensor and its preparation method

A technology of pressure sensor and silicon carbide, which is applied in fluid pressure measurement by changing ohmic resistance, semiconductor devices, gaseous chemical plating, etc., can solve the problems of easy failure of all-metal circuit packaging structure and low processing efficiency of packaging methods, and achieve Good insulation, low thermal conductivity, and improved high temperature stability

Active Publication Date: 2021-04-20
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to overcome the shortcomings of the prior art above, to provide a high temperature resistant silicon carbide pressure sensor and its preparation method; The problem of low processing efficiency

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  • A high temperature resistant silicon carbide pressure sensor and its preparation method
  • A high temperature resistant silicon carbide pressure sensor and its preparation method
  • A high temperature resistant silicon carbide pressure sensor and its preparation method

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Embodiment Construction

[0059] The present invention is described in further detail below in conjunction with accompanying drawing:

[0060] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, or in a specific orientation. construction and operation, and therefore cannot be construed as limiting the present invention; the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be construed as indicating or implying relative importance; in addition, unless otherwise Clearly stipulated and limited, the terms "installation"...

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Abstract

The invention discloses a high-temperature-resistant silicon carbide pressure sensor and a preparation method thereof. The sensor utilizes a novel structure in which a 4H-SiC body-shaped lead partially replaces a metal circuit, and etches a 4H-SiC body-shaped lead on an N-type highly doped epitaxial layer. The electrical connection between the 4H‑SiC body lead and the metal pad is through an ohmic contact area, replacing the all-metal circuit connection between the metal pad and the 4H‑SiC varistor strip, effectively improving the high temperature stability of the sensor circuit connection , and provides a homogeneous 4H‑SiC interface for further direct bonding.

Description

【Technical field】 [0001] The invention belongs to the technical field of micro-electromechanical system (MEMS) pressure sensor manufacturing, and in particular relates to a high-temperature-resistant silicon carbide pressure sensor and a preparation method thereof. 【Background technique】 [0002] As the main product of microelectromechanical systems (MEMS), pressure sensors have broad application prospects and market potential in civil, industrial and military fields. With the expansion of application fields, people have more and more urgent demands for pressure sensors that can directly work in harsh environments, especially high temperature environments. For example, in the field of oil exploration, the pressure measurement needs to be carried out above 275°C, the pressure measurement in the automobile engine should be carried out above 300°C, and the temperature requirements for pressure detection in geothermal, electric power, and chemical plants should be above 375°C, w...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/84G01L9/06B81C1/00
CPCB81C1/00269B81C1/00539B81C1/00547G01L9/06
Inventor 赵玉龙王鲁康赵友龚涛波
Owner XI AN JIAOTONG UNIV
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