A high-efficiency energy-saving temperature-controlled water treatment system and method for treating water
A warm water treatment, high-efficiency and energy-saving technology, applied in the field of water treatment, can solve the problems that limit the practical application of electrochemical oxidation degradation technology, difficult to apply in the field of sewage treatment, and easy evaporation of organic matter, so as to improve the applicable environment and service life, and reduce degradation Low energy consumption and low cost
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Embodiment 1
[0079] This embodiment selects boron-doped diamond electrodes as cathode and anode, and its preparation method is as follows:
[0080] Firstly, anisotropic etching was performed on the surface of the polysilicon substrate material, and 10M KOH solution was used as the anisotropic etching solution, and the polycrystalline silicon substrate material was soaked in the anisotropic etching solution at 80°C for 60min to complete the etching. Then, it is cleaned and dried to obtain step-type polysilicon with high specific surface area.
[0081] The etched polycrystalline silicon is placed in a suspension of nanocrystalline and microcrystalline diamond mixed particles, and ultrasonically oscillated for 30 minutes to obtain a polycrystalline silicon substrate with diamond grains attached to the surface.
[0082] Put the substrate into a chemical vapor deposition furnace, keep the distance between the hot wire and the surface of the substrate at 9 mm, adjust the hydrogen gas flow rate to ...
Embodiment 2
[0090] The other conditions in Example 2 are the same as those in Example 1, except that the polysilicon substrate is etched by the isotropic etching method. The surface of the polysilicon substrate material was first etched isotropically to analyze pure HF and HNO 3 The mixed solution is used as an isotropic etching solution, and the mixed volume ratio is HF:HNO 3 = 3:1. The polysilicon substrate material is placed in an isotropic etching solution, soaked at room temperature for 2 minutes to complete the etching, then cleaned and dried to obtain a pit-microporous composite type polysilicon with a high specific surface area.
[0091] The subsequent preparation process is the same as that of Example 1, and the electrode properties are shown in Table 2:
[0092] Table 2 Electrochemical properties of BDD electrodes obtained in Example 2
[0093] Oxygen evolution potential / V 2.37 Hydrogen evolution potential / V -0.55 Potential window / V 2.92 Background ...
Embodiment 3
[0097] In Example 3, an anisotropic etching method is used to etch a stepped polysilicon substrate, and then an isotropic etching method is used. The etching parameters of the etching solution are the same as those in Examples 1 and 2.
[0098] Subsequently, a BDD electrode was prepared, and the preparation method was the same as that of Example 1. The electrode properties are shown in Table 3:
[0099] Table 3 Electrochemical properties of BDD electrodes obtained in Example 3
[0100] Oxygen evolution potential / V 2.52 Hydrogen evolution potential / V -0.63 Potential window / V 3.15 Background current / μA / cm 2
12.62
[0101] It can be seen from the above data that the anisotropic etching method and the isotropic etching of the polysilicon substrate have excellent electrochemical performance and good electrode reversibility.
[0102] A certain dye wastewater was degraded by the above water treatment system. In the electrochemical degradation mo...
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