Efficient energy-saving temperature control water treatment system and water treatment method thereof
A warm water treatment, high-efficiency and energy-saving technology, applied in the field of water treatment, can solve the problems of rapid cooling of water bodies, high energy consumption, and limiting the practical application of electrochemical oxidative degradation technology.
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Embodiment 1
[0079] In this embodiment, a boron-doped diamond electrode is selected as the cathode and anode, and its preparation method is as follows:
[0080] First perform anisotropic etching on the surface of the polysilicon substrate material, use 10M KOH solution as an anisotropic etching solution, place the polysilicon substrate material in the anisotropic etching solution at 80°C for 60 minutes to complete the etching, Then wash and dry to obtain step-shaped polysilicon with high specific surface area.
[0081] The etched polysilicon was placed in a suspension of nanocrystalline and microcrystalline diamond mixed particles, and ultrasonically oscillated for 30 minutes to obtain a polysilicon substrate with diamond grains attached to the surface.
[0082] Put the substrate into a chemical vapor deposition furnace, keep the distance between the hot wire and the substrate surface at 9 mm, adjust the flow rate of hydrogen gas to maintain 97 sccm during the heating process, and feed metha...
Embodiment 2
[0090] Embodiment 2 is the same as that in Embodiment 1 except that the polysilicon substrate is etched by an isotropic etching method. The surface of the polysilicon substrate material is isotropically etched first to analyze pure HF and HNO 3 The mixed solution is used as an isotropic etching solution, and the mixed volume ratio is HF:HNO 3 =3:1. The polysilicon substrate material is placed in an isotropic etching solution, soaked at room temperature for 2 minutes to complete the etching, and then cleaned and dried to obtain pitted microporous composite polysilicon with high specific surface area.
[0091] The subsequent preparation process is the same as in Example 1, and the electrode properties are shown in Table 2:
[0092] The electrochemical performance of the BDD electrode gained in table 2 embodiment 2
[0093] Oxygen evolution potential / V 2.37 Hydrogen evolution potential / V -0.55 Potential window / V 2.92 Background current / μA / cm 2
...
Embodiment 3
[0097] In Example 3, an anisotropic etching method is used to etch a stepped polysilicon substrate first, and then an isotropic etching method is used, and the etching parameters of the etching solution are the same as those in Embodiments 1 and 2.
[0098] Subsequently, a BDD electrode was prepared, and the preparation method was the same as in Example 1. The electrode properties are shown in Table 3:
[0099] The electrochemical performance of the BDD electrode gained in table 3 embodiment 3
[0100] Oxygen evolution potential / V 2.52 Hydrogen evolution potential / V -0.63 Potential window / V 3.15 Background current / μA / cm 2
12.62
[0101] It can be seen from the above data that the anisotropic etching method combined with isotropic etching of the polysilicon substrate has excellent electrochemical performance and good reversibility of the electrode.
[0102] A certain dye wastewater was degraded by the above-mentioned water treatment system...
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