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CMOS image sensor capable of improving frame frequency high-speed full-digital data reading

An image sensor and data readout technology, applied in image communication, color TV parts, TV system parts, etc., can solve the problem of increasing the complexity of chip post-processing, reducing the frame rate of super large area array CMOS image sensors, etc. problems, to achieve the effects of reducing delay time, expanding dynamic range, and low noise

Active Publication Date: 2020-09-15
THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007]1. Timing does not deal with the inconsistency of super large area array timing delay circuit and row drive timing, which reduces the frame rate of super large area array CMOS image sensor;
[0008]2. The output of the image sensor is an analog output, which increases the complexity of post-processing of the chip;

Method used

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  • CMOS image sensor capable of improving frame frequency high-speed full-digital data reading
  • CMOS image sensor capable of improving frame frequency high-speed full-digital data reading
  • CMOS image sensor capable of improving frame frequency high-speed full-digital data reading

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Embodiment 1

[0044] Such as figure 1 , the photosensitive area array composed of effective pixels, dummy pixels and dark pixels realizes the conversion of photoelectric signals, and the driving ability of the pixel output electrical signal is limited, which is not convenient for transmission, editing and processing. Therefore, the subsequent readout circuit completes the pixel output Electrical signal amplification, noise, storage, analog-to-digital conversion, digital processing, etc. This structure is based on a column-level processing system, and can be divided into a column readout circuit and a column timing buffer circuit according to the location of the module. Peripheral control auxiliary circuits include: timing controllers to realize exposure, conversion, sampling, amplification, readout, AD processing, ISP and other operations; provide bias voltage for column bias, PGA, ADC, Ranp generator, LVDS circuit, etc. Reference module; double-sided drive circuit for large area array row...

Embodiment 2

[0046] Such as figure 2 , taking the exposure, conversion and readout sequence control of pixels of a large area array as an example, further illustrating the content of the present invention to improve the frame rate of a large area array.

[0047] The timing of pixel control exposure, conversion and readout output by the controller is firstly buffered by the row timing buffer to realize the row control timing, which reduces the timing delay in the row direction of the large-area array in the path from the controller to the row timing consistency control circuit time; then through the line timing consistency control circuit, the timing consistency of the row driving timing on both sides of the pixel and the timing delay processing in the direction of the large-area array are processed, so that the timing of the row timing reaching the left and right row driving is completely consistent and the delay is the smallest; finally, after the left and right Row drive circuit drive a...

Embodiment 3

[0049] Such as image 3 , taking the I-th group of readout circuits as a column, the content of the large array column readout circuit of the present invention is further described.

[0050] Group I of the large area array includes N columns of pixels. Firstly, the pixels of this column are sampled and amplified by the programmable gain amplifier (PGA) to realize the sampling and amplification of the pixel reset signal and the integrated signal, and realize the first-level correlated double sampling, and store them in this In the sample-and-hold circuit (S / H) of the column, the voltage difference between the reset signal and the integrated signal represents the light information of the corresponding pixel. The sample-and-hold circuit adopts split-time multiplexing technology, and the programmable gain amplifier can hold the voltage signal on one row while sampling; then, the stored voltage of the sample-and-hold circuit is compared with the slope voltage of the Ramp generator ...

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Abstract

The invention belongs to the technical field of CMOS image sensors, in particular to a CMOS image sensor capable of improving frame frequency high-speed full-digital data reading. The CMOS image sensor comprises a photosensitive area array, a first row driver, a second row driver and a reading circuit; the reading circuit comprises a column reading circuit and a column time sequence buffer circuit, and the column reading circuit comprises a programmable gain amplifier, an ADC circuit, a Ramp generator, a column gating circuit, an ISP circuit and an LVDS interface circuit; the first row drive is arranged on the left side of the photosensitive area array, the row timing sequence buffer is arranged on the left side of the first drive, and the second row drive is arranged on the right side ofthe photosensitive area array. The controller is used for exposure and conversion of pixels, pixel row time sequence consistency control, PGA sampling and amplification, ADC conversion, column circuitgating and ISP processing time sequence control. According to the invention, the frame frequency of the super-large area array CMOS image sensor is improved, and digital image reading with extended dynamic range, low noise and high speed is realized.

Description

technical field [0001] The invention belongs to the technical field of CMOS image sensors, and in particular relates to a CMOS image sensor for reading out high-speed full digital data with improved frame rate. Background technique [0002] The role of the image sensor is mainly to collect digital images and convert the collected optical signals into electrical signals. At present, image sensors that have been commercialized on a large scale are mainly divided into two types: CCD and CMOS. Compared with CCD image sensors, CMOS image sensors have the advantages of low power consumption, low cost and high compatibility, and are widely used in the fields of aerospace, biotechnology and consumer electronics. [0003] With the expansion of the application range, consumers have higher requirements for image size, and the demand for large-scale image sensors is increasing. Commonly used CMOS visible light image sensor processing systems can be divided into three different types a...

Claims

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Application Information

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IPC IPC(8): H04N5/374H04N5/378H04N5/361H04N5/357
CPCH04N25/60H04N25/63H04N25/76H04N25/75
Inventor 吴治军刘昌举李毅强祝晓笑
Owner THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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