GaN HEMT semiconductor device and preparation method thereof

Abstract

The invention provides a GaN HEMT semiconductor device and a preparation method thereof. The method comprises the steps: providing a GaN HEMT semiconductor device film structure; forming a source electrode and a drain electrode on the GaN HEMT semiconductor device thin film structure and depositing a SiN passivation layer; forming a metal gate electrode which is gradually increased from bottom totop in the SiN passivation layer; removing at least part of the SiN passivation layer; and depositing an electrode supplement layer on the surface of the structure formed in the previous step. A gate-last process is adopted, and a metal gate electrode which is gradually increased from bottom to top is formed; secondary deposition is carried out to form an electrode supplement layer of the source electrode and the drain electrode or an electrode supplement layer of the source electrode and the gate field plate; therefore, the distances between the source electrode and the metal gate electrode and between the drain electrode and the metal gate electrode are shortened, the access resistance of the source electrode and the drain electrode is reduced, the voltage withstanding performance of thedevice is improved, meanwhile, the metal gate electrode is prepared after the source electrode and the drain electrode, damage to the metal gate electrode by a source-drain electrode preparation process is avoided, and the performance of the device is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor device manufacturing, in particular to a GaN HEMT semiconductor device and a preparation method thereof. Background technique [0002] The third-generation semiconductor material, that is, Wide Band Gap Semiconductor (WBGS for short) semiconductor material is developed after the first generation of silicon, germanium and the second generation of gallium arsenide and indium phosphide. Among the third-generation semiconductor materials, gallium nitride (GaN) has wide bandgap, direct bandgap, high breakdown electric field, low dielectric constant, high electron saturation drift velocity, strong radiation resistance and good chemical stability Such superior properties as germanium, silicon, and gallium arsenide have become key semiconductor materials for the manufacture of new-generation microelectronic devices and circuits. In particular, it has unique advantages in high temperature, high power, high fr...

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a GaN HEMT semiconductor device and a preparation method thereof, which are used to solve the problem of reducing the connection of the GaN HEMT semiconductor device by using a self-alignment process combined with a metal gate electrode-first process in the prior art. The input resistance will damage the performance of the metal gate electrode, etc.

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