Tantalum target material with preferred orientation, preparation method of tantalum target material and torsion device

Abstract

The invention relates to the technical field of target material preparation, and provides a tantalum target material with preferred orientation, a preparation method of the tantalum target material and a torsion device. According to the method, the internal texture orientation of a tantalum ingot is controlled through torsional deformation, tangential deformation in the diameter direction is generated in the tantalum ingot through torsion, and then the internal texture direction of the tantalum ingot is directionally changed, so that the purpose of controlling the material texture is achieved.Through torsional deformation, the uniformity of a target material structure can be improved, the grain size of the target material is reduced, and the preferred component proportion of (111) and (100) textures is increased; and the preparation method provided by the invention does not need to forge and roll the tantalum ingot, and the content of impurities mixed into the target material can be reduced. The invention further provides the torsion device, the device is simple in structure and easy to operate, and torsion of the tantalum ingot can be achieved by using the device.

Description

technical field [0001] The invention relates to the technical field of target material preparation, in particular to a preferred orientation tantalum target material, a preparation method thereof and a torsion device. Background technique [0002] Physical vapor deposition technology (PVD) is one of the key technologies for preparing high-end semiconductor chips. It can deposit metal or metal compounds in the form of thin films on the surface of silicon wafers or other substrates to prepare high-end semiconductor chips. Physical vapor deposition is completed by sputtering machines, therefore, sputtering targets are key consumables for preparing high-end chips. [0003] The preparation of most existing tantalum targets is mainly achieved by forging and rolling tantalum ingots, and the grain refinement is achieved by controlling the deformation rate and heat treatment, and finally the finished target is obtained. For example, patents with publication numbers CN103572225A, CN1...

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Problems solved by technology

However, during the forging process of the above method, it is easy to press oxides and stains on the surface of the tantalum ingot into the interior of the tantalum ingot, resulting in problems such as uneven internal structure of the target, high impurity content, unstable sputtering speed, and scrapped targets; More critically, forging easily changes the grain orientation of the tantalum ingot, and cannot achieve the preferred orientation of the internal structure of the tantalum ingot. The proportion of texture components with (111) and (100) textures in the target is low.

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