Monolithic integrated image sensing chip and spectrum recognition equipment
A sensor chip, monolithic integration technology, applied in the field of imaging and spectral identification, can solve the problems of inability to achieve hyperspectral imaging, poor device performance uniformity, complex preparation process, etc., to achieve stability, reduce failure rate, reduce The effect of craft difficulty
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Embodiment 1
[0069] Such as Figure 2 to Figure 7 As shown, in the image sensor chip 300 provided in the first embodiment, a bare CIS wafer is used as the image sensor layer 2 to respond to visible-near infrared light. The light modulation layer 1 and the CIS wafer are both prepared by one-time tape-out using a CMOS integrated semiconductor process, and the light modulation layer 1 is directly integrated on the upper surface of the CIS wafer. Such as image 3 with Figure 5 As shown, the light modulation layer 1 described in the first embodiment includes a first sub-modulation layer 101 arranged along its thickness direction, and, as Figure 4 As shown, the light modulation layer 1 further includes a plurality of modulation units 5 distributed along the surface of the light modulation layer 1.
[0070] It is understandable that since both the light modulation layer 1 and the image sensor layer 2 can be manufactured using CMOS integrated semiconductor technology, and achieve monolithic integra...
Embodiment 2
[0086] The structure, principle, object imaging and recognition method, and chip preparation method of the image sensor chip 300 and spectrum recognition device of the second embodiment are the same as those in the foregoing embodiment and will not be repeated here. The difference is:
[0087] The light modulation layer 1 in this embodiment includes two sub-modulation layers arranged along its thickness direction and correspondingly connected, that is, as Figure 8 The first sub-modulation layer 101 and the second sub-modulation layer 102 are shown. In the two sub-modulation layers, all the modulation holes 6 of each layer are respectively arranged up and down to ensure that each modulation hole 6 of each layer can face up and down, so as to ensure that the spectral signal is transmitted vertically in the optical modulation layer 1. For smooth. All the modulation holes 6 of each layer are arranged up and down and connected and penetrate the light modulation layer 1, that is, the ...
Embodiment 3
[0090] The structure, principle, object imaging recognition method, and chip preparation method of the image sensor chip 300 and spectrum recognition device of the third embodiment are similar to those in the foregoing embodiments and will not be repeated here. The difference is:
[0091] The light modulation layer 1 described in this embodiment is Picture 9 As shown, the second sub-modulation layer 102 does not penetrate the light modulation layer 1, that is, the second sub-modulation layer 102 is the lowermost sub-modulation layer, and all the modulation holes 6 in the second sub-modulation layer 102 are It is a blind hole structure. Since the entire material of the light modulation layer 1 is made of light-transmitting material, even if all the modulation holes 6 in the second sub-modulation layer 102 are blind hole structures, it will not affect the transmission of the spectral signal.
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