Bismuth selenide oxide nanosheet photoelectric detector treated by oxygen plasma and preparation method

Abstract

The invention belongs to the related technical field of photoelectric detection and discloses an oxygen plasma treated bismuth oxyselenide nanosheet photoelectric detector and a preparation method. The preparation method comprises the following steps of (1) preparing a bismuth oxyselenide nanosheet on a substrate by using a chemical vapor deposition method; (2) preparing a pair of source-drain metal electrodes on the bismuth oxyselenide nanosheet by adopting a laser direct writing or electron beam exposure technology in combination with thermal evaporation and electron beam evaporation; and (3) carrying out oxygen plasma treatment of the bismuth oxyselenide nanosheet to obtain a bismuth oxyselenide nanosheet photoelectric detector. The preparation method is advantaged in that a plasma processing method is adopted, the preparation method is simple in process, easy to operate and relatively low in cost, is expected to be applied to large-scale improvement of performance of a bismuth oxyselenide nanosheet photoelectric detector, and lays a foundation for application of bismuth oxyselenide in the photoelectric detector.

Description

technical field [0001] The invention belongs to the technical field related to photoelectric detection, and more specifically relates to a bismuth selenium oxide nanosheet photodetector processed by oxygen plasma and a preparation method thereof. Background technique [0002] The conversion technology of photoelectric signals has greatly affected daily life and has a wide range of applications, including visual imaging, optical communication, gas phase sensing and detectors, etc. Although the size and application range of photoelectric detection platforms are gradually expanding, the speed, In terms of efficiency, wavelength range, flexibility, transparency, and compatibility, there is an increasing demand for higher-performance photodetection. [0003] Two-dimensional materials represented by graphene have many excellent electrical, optical, mechanical and thermal properties, especially in terms of photoelectric properties. Two-dimensional materials are likely to replace tr...

AI Technical Summary

Problems solved by technology

Two-dimensional photodetectors have many advantages. For example, graphene detectors have a wide range of spectral detection and ultra-fast response. However, graphene has little responsivity to light due to its zero band gap and low light absorption coefficient in applications. Transparency, flexibility, easy handling, and adjustable bandgap of transition metal chalcogenides make transition metal chalcogenide photodetectors flexible and detect different light wavelengths, but the low carrier mobility limits the scope of application.

[0005] At present, there are mainly two schemes to improve the strong conductivity of two-dimensional bismuth selenium oxide. One is to improve the method of synthesizing two-dimensional bismuth selenium oxide by chemical vapor deposition, but there are inhomogeneous properties among the materials synthesized by chemical vapor deposition. Problem; one is to transfer two-dimensional bismuth selenium oxide to a silicon substrate with an oxide layer, and use external voltage to control it, but the process is complicated

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